Document
CYStech Electronics Corp.
PNP Epitaxial Planar Silicon Transistor
BTA2039J3
Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 1/7
Features
• Large current capability • Very low saturation voltage • Low collector-to-emitter saturation voltage • High speed switching • Pb-free lead plating and halogen-free package
Symbol
BTA2039J3
Outline
TO-252(DPAK)
B:Base C:Collector E:Emitter
B CE
Ordering Information
Device BTA2039J3-0-T3-G
Package
TO-252 (RoHS compliant and halogen-free package)
Shipping 2500 pcs / Tape & Reel
Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products
Packing spec, T3:2500 pcs/tape & reel, 13” reel
Product rank, zero for no rank products
Product name
BTA2039J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 2/7
Absolute Maximum Ratings (Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Continuous Collector Current
Peak Collector Current
Base Current
@TA=25°C
Power Dissipation
@TA=25°C
@TC=25°C
Operating Junction and Storage Temperature Range
Symbol VCBO VCES VCEO VEBO IC ICP IB
Pd
Tj ; Tstg
Note : 1. Single Pulse , Pw≦300μs,Duty≦2%.
2. When tested without any heatsink. 3. When mounted on a PCB with the area of 1cm×1cm, 1oz copper.
Limits -60 -60 -50 -6 -5 -7.5 (Note 1) -1.2 0.8 (Note 2)
1.5 (Note 3) 15 -55 ~ +150
Unit V V V V A A A W
W W
°C
Thermal Characteristics
Parameter
Symbol
Thermal Resistance, Junction to Ambient
RθJA
Thermal Resistance, Junction to Case
RθJC
Note : 1. When mounted on FR-4 PCB with area measuring 10×10 mm, 1oz copper
Value 156
83.3 (Note 1) 8.3
Unit °C/W
Characteristics (Ta=25°C, unless otherwise specified)
Symbol
Min. Typ. Max. Unit
Test Conditions
BVCBO
-60
-
- V IC=-100μA
BVCES
-60
-
- V IC=-100μA, RBE=0Ω
*BVCEO
-50
-
- V IC=-1mA
BVEBO
-6
-
- V IE=-10μA
ICBO - - -50 nA VCB=-60V
IEBO - - -50 nA VEB=-6V
*VCE(sat)1
-50
- -150 mV IC=-1A, IB=-50mA
*VCE(sat)2
-80
- -250 mV IC=-2A, IB=-100mA
*VCE(sat)3
-100
-
-300 mV IC=-1A, IB=-10mA
*VBE(sat)
-0.6
-
-1.2 V IC=-2A, IB=-100mA
hFE1 200 - 560 - VCE=-2V, IC=-500mA
hFE2
50
-
-
- VCE=-2V, IC=-1.5A
fT - 150 - MHz VCE=-10V, IC=-500mA, f=50MHz
Cob - 42 - pF VCB=-10V, f=1MHz
ton tstg tf
- 30 - 230 - 15 -
ns ns ns
IC=-1A, IB1=-100mA, IB2=100mA, VCC=-25V
*Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2%
BTA2039J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 3/7
Typical Characteristics
-IC, Collector Current(A)
Emitter Grounded Output Characteristics 0.5
IB=-1mA
IB=-500uA
IB=-300uA IB=-200uA IB=-100uA 0 012 3456 -VCE, Collector-to-Emitter Voltage(V)
-IC, Collector Current(A)
2 1.8 1.6 1.4 1.2
1 0.8 0.6 0.4 0.2
0 0
Emitter Grounded Output Characteristics
IB=-5mA
IB=-2.5mA
IB=-1.5mA IB=-1mA
IB=-500uA
1 234 5 -VCE, Collector-to-Emitter Voltage(V)
6
-IC, Collector Current(A)
4.5 4
3.5 3
2.5 2
1.5 1
0.5 0 0
1000
Emitter Grounded Output Characteristics
IB=-20mA
IB=-10mA IB=-6mA IB=-4mA IB=-2mA
12 34 5 -VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
125°C
-IC, Collector Current(A)
6 5 4 3 2 1 0
0
1000
Emitter Grounded Output Characteristics
IB=-50mA IB=-25mA
IB=-10mA IB=-5mA
12345 -VCE, Collector-to-Emitter Voltage(V)
6
Current Gain vs Collector Current
125°C
HFE, Current Gain
HFE, Current Gain
100 75°
25°C 0°C -40°C
100 75°C 25°C 0°C -40°C
VCE=-1V
10 1
10 100 1000 -IC, Collector Current(mA)
10000
VCE=-2V
10 1
10 100 1000 -IC, Collector Current(mA)
10000
BTA2039J3
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 4/7
Typical Characteristics(Cont.)
Current Gain vs Collector Current
1000
125°C
100 75°C 25°C 0°C -40°C
10000 1000
Saturation Voltage vs Collector Current
VCESAT@IC=50IB
125 °C 75°C 25°C 0°C
-40°C
100
-VCESAT, Saturation Voltage(mV)
HFE, Current Gain
VCE=-5V
10 1
10 100 1000 -IC, Collector Current(mA)
10000
10000
Saturation Voltage vs Collector Current
VCESAT@IC=100IB
10 10
100 1000 -IC, Collector Current(mA)
10000
10000
Saturation Voltage vs Collector Current
VCESAT@IC=150IB
-VCESAT, Saturation Voltage(mV)
-VCESAT, Saturation Voltage(mV)
1000
100
10 10
125°C 75°C 25°C 0°C
-40°C
100 1000 -IC, Collector Current(mA)
10000
10000 1000
Saturation Voltage vs Collector Current
VBESAT@IC=50IB
-40°C 0°C
25°C 75°C 125°C
1000
100
10 10
125°C 75°C 25°C 0°C -40°C
100 1000 -IC, Collector Current(mA)
10000
10000 1000
On Voltage vs Collector Current
VBEON@VCE=-2V
-40°C
0°C 25°C 75°C 125°C
-VBEON, On Voltage(mV)
-VBESAT, Saturation Voltage(mV)
100 10
100 1000 -IC, Collector Current(mA)
10000
100 1
10 100 1000 -IC, Collector Current(mA)
.