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BTA2039J3 Dataheets PDF



Part Number BTA2039J3
Manufacturers CYStech
Logo CYStech
Description PNP Transistor
Datasheet BTA2039J3 DatasheetBTA2039J3 Datasheet (PDF)

CYStech Electronics Corp. PNP Epitaxial Planar Silicon Transistor BTA2039J3 Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 1/7 Features • Large current capability • Very low saturation voltage • Low collector-to-emitter saturation voltage • High speed switching • Pb-free lead plating and halogen-free package Symbol BTA2039J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTA2039J3-0-T3-G Package TO-252 (RoHS compliant .

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CYStech Electronics Corp. PNP Epitaxial Planar Silicon Transistor BTA2039J3 Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 1/7 Features • Large current capability • Very low saturation voltage • Low collector-to-emitter saturation voltage • High speed switching • Pb-free lead plating and halogen-free package Symbol BTA2039J3 Outline TO-252(DPAK) B:Base C:Collector E:Emitter B CE Ordering Information Device BTA2039J3-0-T3-G Package TO-252 (RoHS compliant and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3:2500 pcs/tape & reel, 13” reel Product rank, zero for no rank products Product name BTA2039J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Collector-Emitter Voltage Emitter-Base Voltage Continuous Collector Current Peak Collector Current Base Current @TA=25°C Power Dissipation @TA=25°C @TC=25°C Operating Junction and Storage Temperature Range Symbol VCBO VCES VCEO VEBO IC ICP IB Pd Tj ; Tstg Note : 1. Single Pulse , Pw≦300μs,Duty≦2%. 2. When tested without any heatsink. 3. When mounted on a PCB with the area of 1cm×1cm, 1oz copper. Limits -60 -60 -50 -6 -5 -7.5 (Note 1) -1.2 0.8 (Note 2) 1.5 (Note 3) 15 -55 ~ +150 Unit V V V V A A A W W W °C Thermal Characteristics Parameter Symbol Thermal Resistance, Junction to Ambient RθJA Thermal Resistance, Junction to Case RθJC Note : 1. When mounted on FR-4 PCB with area measuring 10×10 mm, 1oz copper Value 156 83.3 (Note 1) 8.3 Unit °C/W Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions BVCBO -60 - - V IC=-100μA BVCES -60 - - V IC=-100μA, RBE=0Ω *BVCEO -50 - - V IC=-1mA BVEBO -6 - - V IE=-10μA ICBO - - -50 nA VCB=-60V IEBO - - -50 nA VEB=-6V *VCE(sat)1 -50 - -150 mV IC=-1A, IB=-50mA *VCE(sat)2 -80 - -250 mV IC=-2A, IB=-100mA *VCE(sat)3 -100 - -300 mV IC=-1A, IB=-10mA *VBE(sat) -0.6 - -1.2 V IC=-2A, IB=-100mA hFE1 200 - 560 - VCE=-2V, IC=-500mA hFE2 50 - - - VCE=-2V, IC=-1.5A fT - 150 - MHz VCE=-10V, IC=-500mA, f=50MHz Cob - 42 - pF VCB=-10V, f=1MHz ton tstg tf - 30 - 230 - 15 - ns ns ns IC=-1A, IB1=-100mA, IB2=100mA, VCC=-25V *Pulse Test: Pulse Width ≤380μs, Duty Cycle≤2% BTA2039J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 3/7 Typical Characteristics -IC, Collector Current(A) Emitter Grounded Output Characteristics 0.5 IB=-1mA IB=-500uA IB=-300uA IB=-200uA IB=-100uA 0 012 3456 -VCE, Collector-to-Emitter Voltage(V) -IC, Collector Current(A) 2 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 Emitter Grounded Output Characteristics IB=-5mA IB=-2.5mA IB=-1.5mA IB=-1mA IB=-500uA 1 234 5 -VCE, Collector-to-Emitter Voltage(V) 6 -IC, Collector Current(A) 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 0 1000 Emitter Grounded Output Characteristics IB=-20mA IB=-10mA IB=-6mA IB=-4mA IB=-2mA 12 34 5 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current 125°C -IC, Collector Current(A) 6 5 4 3 2 1 0 0 1000 Emitter Grounded Output Characteristics IB=-50mA IB=-25mA IB=-10mA IB=-5mA 12345 -VCE, Collector-to-Emitter Voltage(V) 6 Current Gain vs Collector Current 125°C HFE, Current Gain HFE, Current Gain 100 75° 25°C 0°C -40°C 100 75°C 25°C 0°C -40°C VCE=-1V 10 1 10 100 1000 -IC, Collector Current(mA) 10000 VCE=-2V 10 1 10 100 1000 -IC, Collector Current(mA) 10000 BTA2039J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C157J3 Issued Date : 2014.12.03 Revised Date : 2014.12.04 Page No. : 4/7 Typical Characteristics(Cont.) Current Gain vs Collector Current 1000 125°C 100 75°C 25°C 0°C -40°C 10000 1000 Saturation Voltage vs Collector Current VCESAT@IC=50IB 125 °C 75°C 25°C 0°C -40°C 100 -VCESAT, Saturation Voltage(mV) HFE, Current Gain VCE=-5V 10 1 10 100 1000 -IC, Collector Current(mA) 10000 10000 Saturation Voltage vs Collector Current VCESAT@IC=100IB 10 10 100 1000 -IC, Collector Current(mA) 10000 10000 Saturation Voltage vs Collector Current VCESAT@IC=150IB -VCESAT, Saturation Voltage(mV) -VCESAT, Saturation Voltage(mV) 1000 100 10 10 125°C 75°C 25°C 0°C -40°C 100 1000 -IC, Collector Current(mA) 10000 10000 1000 Saturation Voltage vs Collector Current VBESAT@IC=50IB -40°C 0°C 25°C 75°C 125°C 1000 100 10 10 125°C 75°C 25°C 0°C -40°C 100 1000 -IC, Collector Current(mA) 10000 10000 1000 On Voltage vs Collector Current VBEON@VCE=-2V -40°C 0°C 25°C 75°C 125°C -VBEON, On Voltage(mV) -VBESAT, Saturation Voltage(mV) 100 10 100 1000 -IC, Collector Current(mA) 10000 100 1 10 100 1000 -IC, Collector Current(mA) .


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