BTC2383K3

CYStech Electronics Corp. Spec. No. : C625K3 Issued Date : 2014.04.17 Revised Date : Page No. : 1/8 NPN Epitaxial Planar Transistor BTC2383K3 BVCEO IC RCESAT(MAX) 160V 1A 1Ω Features High breakdown voltage , BVCEO=160V Low Saturation Voltage, VCE(sat)=0.2V(typ)@IC=500mA, IB=50mA Complementary to BTA1013K3 Pb-free lead plating and halogen-free package Symbol BTC2383K3 Outline TO-92L B：Base C：Collector E：Emitter Ordering Information Device BTC2383K3-0-TB-G BTC2383K3-0-BM-G Package TO-92L (Pb-free lead plating and halogen-free package) TO-92L (Pb-free lead plating and halogen-free package) Shipping 2000 pcs / tape & box 500 pcs / bag, 10 bags/box, 10 boxes/carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, TB : 2000 pcs / tape & box ; BM : 500 pcs/bag, 10 bags/box, 10 boxes/carton Product rank, zero for no rank products Product name BTC2383K3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C625K3 Issued Date : 2014.04.17 Revised Date : Page No. : 2/8 Absolute Maximum Ratings (Ta=25°C) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current(DC) Collector Current(Pulsed)(Note 1) Base Current Power Dissipation Thermal Resistance, Junction to Ambient Operating Junction Temperature and Storage Range Note 1: Single pulse, Pw≤300μs, Duty Cycle≤2%. Symbol VCBO VCEO VEBO IC ICP IB PD RθJA Tj ; Tstg Limits 200 160 6 1 3 0.5...