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MTB080N15J3 Dataheets PDF



Part Number MTB080N15J3
Manufacturers CYStech
Logo CYStech
Description N-Channel Enhancement Mode Power MOSFET
Datasheet MTB080N15J3 DatasheetMTB080N15J3 Datasheet (PDF)

CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB080N15J3 BVDSS 150V ID @VGS=10V, TC=25°C 18A RDS(ON)@VGS=10V, ID=10A 82.3mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080N15J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB080N15J3.

  MTB080N15J3   MTB080N15J3



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CYStech Electronics Corp. Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 1/9 N -Channel Enhancement Mode Power MOSFET MTB080N15J3 BVDSS 150V ID @VGS=10V, TC=25°C 18A RDS(ON)@VGS=10V, ID=10A 82.3mΩ(typ) RDS(ON)@VGS=4.5V, ID=10A 85.8mΩ(typ) Features • Low Gate Charge • Simple Drive Requirement • Pb-free lead plating and halogen-free package Equivalent Circuit MTB080N15J3 Outline TO-252(DPAK) G:Gate D:Drain S:Source G DS Ordering Information Device MTB080N15J3-0-T3-G Package TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / Tape & Reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB080N15J3 CYStek Product Specification CYStech Electronics Corp. Absolute Maximum Ratings (TC=25°C, unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TC=25°C, VGS=10V Continuous Drain Current @ TC=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Continuous Drain Current @ TA=25°C, VGS=10V Continuous Drain Current @ TA=100°C, VGS=10V Pulsed Drain Current *1 Avalanche Current Avalanche Energy @ L=6mH, ID=6.3A, RG=25Ω Total Power Dissipation @TC=25℃ Total Power Dissipation @TC=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Total Power Dissipation @TA=25℃ Total Power Dissipation @TA=100℃ Operating Junction and Storage Temperature Range Symbol VDS VGS ID *2 *2 IDSM *3 *3 IDM IAS EAS PD *2 *2 PDSM *3 *3 Tj, Tstg Spec. No. : C987J3 Issued Date : 2015.02.03 Revised Date : Page No. : 2/9 Limits 150 ±20 18.0 12.7 3.2 2.0 2.6 1.6 72 6.3 119 83 42 2.5 1.0 1.7 0.7 -55~+175 Unit V A mJ W °C Thermal Data Parameter Symbol Thermal Resistance, Junction-to-case, max Rth,j-c Thermal Resistance, Junction-to-ambient, max Thermal Resistance, Junction-to-ambient, max *2 *3 Rth,j-a Value 2 50 75 Unit °C/W Note : *1. Pulse width limited by maximum junction temperature *2. When the device is mounted on 1 in²FR-4 board with 2 oz. copper. *3. When the device is on the minimum pad size recommended. *4. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. *5. The power dissipation PDSM is based on RθJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user’s specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. Characteristics (Tc=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS 150 - - V VGS=0V, ID=250μA ∆BVDSS/∆Tj - 0.15 - V/°C Reference to 25°C, ID=250μA VGS(th) 1.0 - 2.5 V VDS =VGS, ID=250μA GFS *1 - 18 - S VDS =10V, ID=10A I.


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