MTB1D7N03J3

CYStech Electronics Corp. Spec. No. : C948J3 Issued Date : 2015.09.14 Revised Date : 2018.05.17 Page No. : 1/ 9 N-Channel Enhancement Mode Power MOSFET MTB1D7N03J3 BVDSS ID@VGS=10V, TC=25°C ID@VGS=10V, TA=25°C RDS(ON)@VGS=10V, ID=20A RDS(ON)@VGS=4.5V, ID=20A 30V 60A 20.6A 2.0 mΩ(typ) 2.3 mΩ(typ) Features  Low On Resistance  Simple Drive Requirement  Low Gate Charge  Fast Switching Characteristic  Pb-free lead plating and halogen-free package Symbol MTB1D7N03J3 Outline TO-252(DPAK) G：Gate D：Drain S：Source G DS Ordering Information Device Package MTB1D7N03J3-0-T3-G TO-252 (Pb-free lead plating and halogen-free package) Shipping 2500 pcs / tape& reel Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, T3 : 2500 pcs / tape & reel, 13” reel Product rank, zero for no rank products Product name MTB1D7N03J3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C948J3 Issued Date : 2015.09.14 Revised Date : 2018.05.17 Page No. : 2/ 9 Absolute Maximum Ratings (TC=25C) Parameter Symbol Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=100C, VGS=10V(silicon limit) (Note 1) Continuous Drain Current @TC=25C, VGS=10V(package limit) (Note 1) Continuous Drain Current @TA=25C, VGS=10V (Note 2) Continuous Drain Current @TA=70C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10...