MTDN1034C6

CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN1034C6 BVDSS ID Features High speed switching Low-voltage drive(1.5V) Easily designed drive circuits Easy to use in parallel Pb-free package RDSON(TYP) VGS=4.5V, ID=200mA VGS=2.5V, ID=175mA VGS=1.8V, ID=150mA VGS=1.5V, ID=40mA 30V 0.3A 0.85Ω 1.23Ω 1.8Ω 2.3Ω Equivalent Circuit MTDN1034C6 Outline SOT-563 D1 G2 S2 Tr1 Tr2 S1 G1 D2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C, unless otherwise specified) Parameter Symbol Limits Drain-Source Voltage VDSS 30 Gate-Source Voltage VGSS ±8 Continuous Drain Current @ VGS=4.5V, TA=25°C Continuous Drain Current @ VGS=4.5V, TA=85°C ID 0.3 0.22 Pulsed Drain Current IDM 1.6 (Note 1) Power Dissipation Pd 150 (Note 2) Operating Junction Temperature Range Tj -55~+150 Storage Temperature Range Tstg -55~+150 Note : 1. Pulse test, pulse width≤300μs, duty≤2% 2. 120mW per element must not be exceeded. Unit V V A mW °C °C MTDN1034C6 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C833C6 Issued Date : 2012.08.07 Revised Date : 2013.08.27 Page No. : 2/ 8 Electrical Characteristics (Ta=25°C, unless otherwise specified) Symbol Min. Typ. Max. Unit Test Conditions Static BVDSS* VGS(th) IGSS IDSS RDS(ON)* 30 0.5 - GFS - Dynamic Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf - Source-Drain ...