CYStech Electronics Corp.
N-CHANNEL MOSFET (dual transistors)
MTDN3018S6R
Spec. No. : C320S6R Issued Date : 2007.12.23 ...
CYStech Electronics Corp.
N-CHANNEL MOSFET (dual
transistors)
MTDN3018S6R
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 1/ 7
Features
Low on-resistance High ESD capability High speed switching Low-voltage drive(4V) Easily designed drive circuits Easy to use in parallel Pb-free package
Equivalent Circuit
MTDN3018S6R
Outline
SOT-363R
Tr1 Tr2
The following characteristics apply to both Tr1 and Tr2
Absolute Maximum Ratings (Ta=25°C)
Parameter
Drain-Source Voltage Gate-Source Voltage
Drain Current
Drain Reverse Current
Power Dissipation
ESD susceptibility
Junction Temperature Storage Temperature
Continuous Pulsed Continuous Pulsed
Symbol
VDSS
VGSS ID IDP IDR IDRP Pd
Tj Tstg
Note : 1. Pulse test, pulse width≤300μs, duty≤2%
2. 200mW per element must not be exceeded.
3. Human body model, 1.5kΩ in series with 100pF
Limits
60 ±20 115 700 115 700
300(total)
1250
150
-55~+150
(Note 1)
(Note 1) (Note 2) (Note 3)
Unit
V V mA mA mA mA
mW
V
°C °C
MTDN3018S6R
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C320S6R Issued Date : 2007.12.23 Revised Date :2008.01.25 Page No. : 2/ 7
Electrical Characteristics (Ta=25°C)
Symbol Min. Typ. Max.
BVDSS* VGS(th) IGSS IDSS
RDS(ON)*
60 1 -
-- 2.5 - ±10 -1 7.4 13 7.8 15 4.4 12 4.9 6 3.3 4.5
GFS 100 - -
Ciss - 7.32 Coss - 3.42 Crss - 7.63 -
Unit Test Conditions V VGS=0, ID=10μA V VDS=VGS, ID=250μA μA VGS=±20V, VDS=0 μA VDS=60V, VGS=0 ID=1mA, VGS=2.5V ID=10mA, VGS=2.5...
