MTDN6303S6R

CYStech Electronics Corp. Spec. No. : C814S6R Issued Date : 2012.05.15 Revised Date : 2014.04.15 Page No. : 1/ 8 N-CHANNEL MOSFET (dual transistors) MTDN6303S6R BVDSS ID RDSON@VGS=4.5V, ID=600mA RDSON@VGS=2.5V, ID=400mA Features RDSON@VGS=1.8V, ID=350mA Low on-resistance High ESD capability High speed switching Low-voltage drive(1.8V) Pb-free lead plating and halogen-free package 20V 760mA 370mΩ(typ) 500mΩ(typ) 1.1Ω (typ) Equivalent Circuit MTDN6303S6R Outline SOT-363 Tr1 Tr2 The following characteristics apply to both Tr1 and Tr2 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ TA=25°C, VGS=4.5V (Note 3) Continuous Drain Current @ TA=85°C, VGS=4.5V (Note 3) Pulsed Drain Current (Notes 1, 2) Maximum Power Dissipation (Note 3) TA=25℃ TA=85℃ ESD susceptibility Operating Junction and Storage Temperature Symbol VDS VGS ID IDM PD Tj, Tstg Note : 1. Pulse width limited by maximum junction temperature. 2. Pulse width≤ 300μs, duty cycle≤2%. 3.Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. 4.Human body model, 1.5kΩ in series with 100pF MTDN6303S6R Limits 20 ±8 760 550 3 300 160 2000 (Note 4) -55~+150 Unit V mA A mW V °C CYStek Product Specification CYStech Electronics Corp. Thermal Performance Parameter Thermal Resistance, Junction-to-Ambient(PCB mounted) (Note) Note : Surface mounted on 1 in² copper pad of FR-4 board, t≤5s. Symbol Rth,ja Spec. No. : C814S6R Issued Da...