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MTDN9971Q8

CYStech

Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Dual N-CHANNEL ENH...


CYStech

MTDN9971Q8

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CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9971Q8 Description The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=60mΩ@VGS=4.5V, ID=2.5A Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free package Equivalent Circuit MTDN9971Q8 Outline SOP-8 G:Gate S:Source D:Drain MTDN9971Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 2/5 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Breakdown Voltage Gate-Source Voltage Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol BVDSS VGS ID ID IDM Pd Tj, Tstg Rth,ja Limits 60 ±25 5 3.2 30 2 0.016 -55~+150 62.5 Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad. 2.Pulse width ≤300μs, duty cycle≤2%. 3.Pulse width limited by maximum junct...




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