Dual N-Channel Enhancement Mode Power MOSFET
CYStech Electronics Corp.
Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5
Dual N-CHANNEL ENH...
Description
CYStech Electronics Corp.
Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 1/5
Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET
MTDN9971Q8
Description
The MTDN9971Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Features
RDS(ON)=60mΩ@VGS=4.5V, ID=2.5A Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free package
Equivalent Circuit
MTDN9971Q8
Outline
SOP-8
G:Gate S:Source D:Drain
MTDN9971Q8
CYStek Product Specification
CYStech Electronics Corp.
Spec. No. : C415Q8 Issued Date : 2007.07.05 Revised Date : Page No. : 2/5
Absolute Maximum Ratings (Ta=25°C)
Parameter Drain-Source Breakdown Voltage Gate-Source Voltage
Continuous Drain Current @TA=25 °C (Note 1) Continuous Drain Current @TA=70 °C (Note 1) Pulsed Drain Current (Note 2, 3)
Total Power Dissipation @ TA=25 °C Linear Derating Factor
Operating Junction and Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1)
Symbol BVDSS
VGS ID ID IDM Pd
Tj, Tstg Rth,ja
Limits 60 ±25 5 3.2 30 2
0.016 -55~+150
62.5
Note : 1.Surface mounted on 1 in² copper pad of FR-4 board, 135°C/W when mounted on minimum copper pad.
2.Pulse width ≤300μs, duty cycle≤2%.
3.Pulse width limited by maximum junct...
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