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MTDN9973Q8

CYStech

Dual N-Channel Enhancement Mode Power MOSFET

CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-...


CYStech

MTDN9973Q8

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CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 1/7 Dual N-CHANNEL ENHANCEMENT MODE POWER MOSFET MTDN9973Q8 Description The MTDN9973Q8 provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The SOP-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. Features RDS(ON)=100mΩ@VGS=4.5V, ID=2A Simple drive requirement Low on-resistance Fast switching speed Dual N-ch MOSFET package Pb-free lead plating package Equivalent Circuit MTDN9973Q8 Outline SOP-8 G:Gate S:Source D:Drain Ordering Information Device Package MTDN9973Q8 SOP-8 (Pb-free lead plating package) Shipping 3000 pcs / Tape & Reel Marking 9973SS MTDN9973Q8 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C418Q8 Issued Date : 2007.09.20 Revised Date : 2011.03.21 Page No. : 2/7 Absolute Maximum Ratings (Ta=25°C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current @ VGS=10V, TA=25 °C (Note 1) Continuous Drain Current @ VGS=10V, TA=70 °C (Note 1) Pulsed Drain Current (Note 2&3) Total Power Dissipation @ TA=25 °C Linear Derating Factor Operating Junction Temperature Storage Temperature Thermal Resistance, Junction-to-Ambient (Note 1) Symbol VDS VGS ID ID IDM Pd Tj Tstg Rth,ja Limits 60 ±20 3.9 2.5 20 2 0.016 -55~...




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