MTE130N20E3

CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTE130N20E3 Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No. : 1/ 8 Features Simple Drive Requirement Low Gate Charge Fast Switching Characteristic RoHS compliant package BVDSS ID @ VGS=10V, TC=25°C RDS(ON)@VGS=10V, ID=9A 200V 18A 159 mΩ(typ) Symbol MTE130N20E3 Outline TO-220 G：Gate D：Drain S：Source GDS Ordering Information Device MTE130N20E3-0-UB-X Package TO-220 (RoHS compliant package) Shipping 50 pcs/tube, 20 tubes/box, 4 boxes / carton Environment friendly grade : S for RoHS compliant products, G for RoHS compliant and green compound products Packing spec, UB : 50 pcs / tube, 20 tubes/box Product rank, zero for no rank products Product name MTE130N20E3 CYStek Product Specification CYStech Electronics Corp. Spec. No. : C966E3 Issued Date : 2015.05.06 Revised Date : Page No. : 2/ 8 Absolute Maximum Ratings (TC=25°C) Parameter Drain-Source Voltage (Note 1) Gate-Source Voltage Continuous Drain Current @TC=25°C, VGS=10V (Note 1) Continuous Drain Current @TC=100°C, VGS=10V (Note 1) Continuous Drain Current @TA=25°C, VGS=10V (Note 2) Continuous Drain Current @TA=70°C, VGS=10V (Note 2) Pulsed Drain Current @ VGS=10V (Note 3) Avalanche Current (Note 3) Single Pulse Avalanche Energy @ L=1mH, ID=3 Amps, VDD=50V (Note 2) TC=25°C (Note 1) Power Dissipation TC=100°C TA=25°C (Note 1) (Note 2) TA=70°C (Note 2) Maximum Temperature for Soldering @ Lead ...