B772

Elektronische Bauelemente B772 -3A , -40V PNP Plastic Encapsulated Transistor FEATURES  Low frequency power amplifier  High Current  Low Speed Switching RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free CLASSIFICATION OF hFE Product-Rank B772-R Range 60~120 B772-O 100~200 B772-Y 160~320 B772-GR 200~400 TO-126 Emitter Collector Base A E F N L M K B H J C D G REF. A B C D E F G Millimeter Min. Max. 7.40 7.80 2.50 2.90 10.60 11.00 15.30 15.70 3.70 3.90 3.90 4.10 2.29 TYP. REF. H J K L M N Millimeter Min. Max. 1.10 1.50 0.45 0.60 0.66 0.86 2.10 2.30 1.17 1.37 3.00 3.20 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -40 -30 -6 -3 1.25 150, -55~150 Unit V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions Collector to Base Breakdown Voltage V(BR)CBO -40 - - V IC= -100μA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO -30 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -6 - - V IE= -100μA, IC=0 Collector Cut – Off Current ICBO - - -1 μA VCB= -40V, IE=0 Collector Cut – Off Current ICEO - - -10 μA VCE= -30V, IB=0 Emitter Cut – Off Current IEBO - - -1 μA VEB= -6V, IC=0 DC C...