KI001P

SMD Type MOSFET P-Channel Enhancement MOSFET KI001P ■ Features ● VDS (V) =-12V ● ID =-2.8 A ● RDS(ON) ＜ 100mΩ (VGS =-4.5V) ● RDS(ON) ＜ 150mΩ (VGS =-2.5V) +0.12.4 -0.1 SOT-23 2.9 +0.1 -0.1 0.4 +0.1 -0.1 3 12 0.95 +0.1 -0.1 1.9 +0.1 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1 +0.05 -0.01 +0.10.97 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction and Storage Temperature Range Symbol VDS VGS ID PD TJ Tstg Rating -12 ±8 -2.8 1.2 150 -55 to 150 Unit V A W ℃ 0-0.1 +0.10.38 -0.1 1.Gate 2.Source 3.Drain ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Symbol VDSS IDSS IGSS VGS(th) Static Drain-Source On-Resistance RDS(On) Test Conditions ID=-250μA, VGS=0V VDS=-12V, VGS=0V,Tj = 25℃ VDS=0V, VGS=±12V VDS=VGS ID=-250μA VGS=-4.5V, ID=-1A VGS=-2.5V, ID=-0.5A Min Typ Max Unit -12 -18 V 1 μA ±100 nA -0.4 -0.7 -1.1 V 100 mΩ 150 www.kexin.com.cn 1 ...