P-Channel MOSFET
SMD Type
MOSFET
P-Channel Enhancement MOSFET KI005P
■ Features
● VDS (V) =-20V ● ID =-2.8 A ● RDS(ON) < 115mΩ (VGS =-...
Description
SMD Type
MOSFET
P-Channel Enhancement MOSFET KI005P
■ Features
● VDS (V) =-20V ● ID =-2.8 A ● RDS(ON) < 115mΩ (VGS =-4.5V) ● RDS(ON) < 160mΩ (VGS =-2.5V)
+0.12.4 -0.1
SOT-23
2.9 +0.1 -0.1
0.4 +0.1 -0.1
3
12
0.95 +0.1 -0.1 1.9 +0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1 +0.05
-0.01
+0.10.97 -0.1
■ Absolute Maximum Ratings Ta = 25℃
Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Power Dissipation Junction Temperature Junction and Storage Temperature Range
Symbol VDS VGS ID PD TJ Tstg
Rating -20 ±12 -2.8 1.2 150
-55 to 150
Unit V
A W ℃
0-0.1 +0.10.38
-0.1
1.Gate 2.Source 3.Drain
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage
Symbol VDSS IDSS IGSS VGS(th)
Static Drain-Source On-Resistance
RDS(On)
Test Conditions ID=-250μA, VGS=0V VDS=-12V, VGS=0V,Tj = 25℃ VDS=0V, VGS=±12V VDS=VGS ID=-250μA VGS=-4.5V, ID=-1A VGS=-2.5V, ID=-0.5A
Min Typ Max Unit -20 V
1 μA ±100 nA -0.4 -0.7 -1.1 V
115 mΩ 160
■ Marking
Marking
005P
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