Dual N-Channel MOSFET
SMD Type
MOSFET
■ Features
● RDS(on) = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V.
Dual N-Channel MOSFET...
Description
SMD Type
MOSFET
■ Features
● RDS(on) = 0.030 Ω @ VGS = 4.5 V ● RDS(on) = 0.040 Ω @ VGS = 2.5 V.
Dual N-Channel MOSFET KI9926A
SOP-8
1.50 0.15
+0.040.21 -0.02
D1 D2
G1 G2
S1 S2
■ Absolute Maximum Ratings Ta = 25℃
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current *1
TA=25℃
TA=70℃
Pulsed Drain Current
Maximum Power Dissipation *1 TA = 25℃
TA = 70℃
Thermal Resistance,Junction-to-Ambient
Maximum Junction-to-Foot (Drain)
Jumction temperature and Storage temperature
*1 Surface Mounted on 1” x 1” FR4 Board.
Symbol VDS VGS
ID
IDM
PD
RθJA RθJF Tj.Tstg
S1 1 G1 2 S2 3 G2 4
Top View
8 D1 7 D1 6 D2 5 D2
Rating 20
±12 4.8 3.8 30 1.25 0.8 100 40 -55 to +150
Unit V V A A A W W
℃/W ℃/W
℃
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KI9926A
■ Electrical Characteristics Ta = 25℃
Parameter Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Threshold Voltage Gate-Body Leakage
Drain-Source On-State Resistance *2
On-State Drain Current *2 Forward Transconductance *2 Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Continuous Source Current (Diode Conduction) Diode Forward Voltage *2
Symbol
Test conditions
VDSS VGS = 0 V, ID = 250 μA
VDS = 20V , VGS = 0V IDSS
VDS = 20V , VGS = 0V , TJ =55℃
VGS(th) VDS = VGS , ID = 250uA
IGSS VDS = 0V , VGS = ±12V
VGS = 4.5V , ID = 6.5A rDS(on)
VGS = 2.5V , ID = 5.4A
ID(on) VDS = 5V , VGS = 4.5V
gfs VDS = 15V , ID =6A
Qg
Qgs VDS...
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