LASER DIODE
PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTIO...
Description
PRELIMINARY DATA SHEET
LASER DIODE
NX5313 Series
1 310 nm FOR FTTH PON APPLICATION InGaAsP MQW-FP LASER DIODE
DESCRIPTION
The NX5313 Series is a 1 310 nm Multiple Quantum Well (MQW) structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are designed for application up to 1.25 Gb/s.
APPLICATION
FTTH PON (B-PON, G-PON, GE-PON 10 km) system
FEATURES
Optical output power
Po = 13.0 mW
Low threshold current
lth = 6 mA
Differential Efficiency
ηd = 0.5 W/A
Wide operating temperature range TC = −40 to +85°C
InGaAs monitor PIN-PD
CAN package
φ 5.6 mm
Focal point
6.35 mm
LD beam angle optimized for 8 degree angled SMF
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Document No. PL10529EJ01V0DS (1st edition) Date Published August 2004 CP(K) Printed in Japan
NEC Compound Semiconductor Devices, Ltd. 2004
NX5313 Series
PACKAGE DIMENSIONS (UNIT: mm)
0.3+–00..01
110˚±2˚
φ 5.6+–00..0030 φ 4.2±0.1
φ 3.55±0.1
1.0±0.1
BOTTOM VIEW
0.3+–00..10
Focal Point*1 φ2.0 ∆x = 180 µ m Typ
∆y = 0 µ m Typ
1 24
3
PIN CONNECTIONS
6.35±0.5
Reference Plane
4– φ 0.45
φ2.0
NX5313EH 1 (Case)
LD 24
PD 3
NX5313EK
1 (Case)
LD 2
4
PD 3
15.0±1.0 1.2±0.1 3.87±0.3 2.97±0.2
*1 Focal ...
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