RJK0631JPE

RJK0631JPE Silicon N Channel Power MOS FET High Speed Power Switching Features For Automotive application AEC-Q101 compliant Low on-resistance : RDS(on) = 12 mΩ typ. Capable of 4.5 V gate drive Low input capacitance: Ciss = 1350 pF typ Outline RENESAS Package code: PRSS0004AE-B (Package name: LDPAK (S)-(1) ) 4 123 1G Preliminary Datasheet R07DS0341EJ0300 Rev.3.00 Jul 24, 2013 2, 4 D 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Body-drain diode reverse drain peak current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10μs duty cycle ≤ 1% 2. Tch = 25°C, Rg ≥ 50 Ω 3. Tc = 25°C 4. AEC-Q101 compliant Symbol VDSS VGSS ID ID (pulse) Note1 IDR IDR (pulse) Note1 IAP Note2 EAR Note2 Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics Channel to case thermal impedance θch-c: 2.5°C/W Value 60 ±20 30 120 30 120 18 27.8 60 175 –55 to +150 (Ta = 25°C) Unit V V A A A A A mJ W °C °C R07DS0341EJ0300 Rev.3.00 Jul 24, 2013 Page 1 of 6 RJK0631JPE Preliminary Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay t...