RJK0636JPD

RJK0636JPD 60 V - 25 A - N Channel Power MOS FET High Speed Power Switching Preliminary Datasheet R07DS0365EJ0200 Rev.2.00 Aug 29, 2012 Features  For Automotive application  AEC-Q101 compliant  Low on-resistance : RDS(on) = 18 m typ.  Capable of 4.5 V gate drive  Low input capacitance : Ciss = 750 pF typ Outline RENESAS Package code: PRSS0004ZD-C (Package name: DPAK (S)) 4 2, 4 D 123 1G 1. Gate 2. Drain 3. Source 4. Drain S 3 Absolute Maximum Ratings Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW  10 s, duty cycle  1% 2. Tch = 25C, Rg  50  3. Tc = 25C 4. AEC-Q101 compliant Symbol VDSS VGSS ID ID(pulse)Note1 IDR IAP Note2 EAR Note2 Pch Note3 Tch Note4 Tstg Thermal Impedance Characteristics  Channel to case thermal impedance ch-c: 5°C/W Ratings 60 ±20 25 100 25 19 30.9 30 175 –55 to +150 (Ta = 25°C) Unit V V A A A A mJ W C C R07DS0365EJ0200 Rev.2.00 Aug 29, 2012 Page 1 of 6 RJK0636JPD Electrical Characteristics Item Gate to source leak current Zero gate voltage drain current Gate to source cutoff voltage Static drain to source on state resistance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate to source charge Gate to drain charge Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage...