IGBT
RJP60V0DPM-80
600V - 22A - IGBT Application: Inverter
Features
• High breakdown-voltage • Low collector to emitter satur...
Description
RJP60V0DPM-80
600V - 22A - IGBT Application: Inverter
Features
High breakdown-voltage Low collector to emitter saturation voltage
VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 μs typ.) Trench gate and thin wafer technology (G6H series)
Outline
RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF)
1 2 3
G
Preliminary Datasheet
R07DS1036EJ0200 Rev.2.00
Apr 02, 2014
C 1. Gate 2. Collector 3. Emitter
E
Absolute Maximum Ratings
Item
Collector to emitter voltage / diode reverse voltage
Gate to emitter voltage
Collector current
Tc = 25°C
Tc = 100°C
Collector peak current
Collector dissipation
Junction to case thermal impedance
Junction temperature
Storage temperature
Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1%
2. Value at Tc = 25°C
Symbol
VCES / VR VGES IC IC
IC(peak) Note1 PC Note2 θj-c Note2 Tj
Tstg
Ratings 600 ±30 45 22 90 60 2.08 150
–55 to +150
(Ta = 25°C)
Unit V V A A A W
°C/ W °C °C
R07DS1036EJ0200 Rev.2.00 Apr 02, 2014
Page 1 of 7
RJP60V0DPM-80
Preliminary
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ Max Unit
Test Conditions
Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage
Input capacitance Output capacitance Reveres transfer capacitance
ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres
——1
— — ±1
5.5 — 7.5
— 1.5 2.1
— 1.9 —
—
1080
—
— 58 —
— 42 —
μA VCE = 600 V, VGE = 0
μA VGE = ...
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