RJP60V0DPM-80

RJP60V0DPM-80 600V - 22A - IGBT Application: Inverter Features High breakdown-voltage Low collector to emitter saturation voltage VCE(sat) = 1.5 V typ. (at IC = 22 A, VGE = 15 V, Ta = 25°C) Short circuit withstand time (6 μs typ.) Trench gate and thin wafer technology (G6H series) Outline RENESAS Package code: PRSS0003ZD-A (Package name: TO-3PF) 1 2 3 G Preliminary Datasheet R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 C 1. Gate 2. Collector 3. Emitter E Absolute Maximum Ratings Item Collector to emitter voltage / diode reverse voltage Gate to emitter voltage Collector current Tc = 25°C Tc = 100°C Collector peak current Collector dissipation Junction to case thermal impedance Junction temperature Storage temperature Notes: 1. PW ≤ 10 μs, duty cycle ≤ 1% 2. Value at Tc = 25°C Symbol VCES / VR VGES IC IC IC(peak) Note1 PC Note2 θj-c Note2 Tj Tstg Ratings 600 ±30 45 22 90 60 2.08 150 –55 to +150 (Ta = 25°C) Unit V V A A A W °C/ W °C °C R07DS1036EJ0200 Rev.2.00 Apr 02, 2014 Page 1 of 7 RJP60V0DPM-80 Preliminary Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test Conditions Zero gate voltage collector current Gate to emitter leak current Gate to emitter cutoff voltage Collector to emitter saturation voltage Input capacitance Output capacitance Reveres transfer capacitance ICES IGES VGE(off) VCE(sat) VCE(sat) Cies Coes Cres ——1 — — ±1 5.5 — 7.5 — 1.5 2.1 — 1.9 — — 1080 — — 58 — — 42 — μA VCE = 600 V, VGE = 0 μA VGE = ...