RJS6004TDPP-EJ

RJS6004TDPP-EJ 600V - 10A - Diode SiC Schottky Barrier Diode Features New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery Outline RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L) 12 Preliminary Datasheet R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 1 1. Cathode 2. Anode 2 Absolute Maximum Ratings Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature Electrical Characteristics Symbol VRM IF IFSM Tj Tstg Item Forward voltage Reverse current Reverse recovery time Symbol VF IR trr Min ⎯ ⎯ ⎯ Typ 1.5 ⎯ 15 Ratings 600 10 60 150 –55 to +150 (Ta = 25°C) Unit V A A °C °C (Ta = 25°C) Max Unit Test conditions 1.8 V IF = 10 A 10 μA VR = 600 V ⎯ ns IF = 10 A, di/dt = 300 A/μs R07DS0896EJ0300 Rev.3.00 Jan 23, 2014 Page 1 of 3 RJS6004TDPP-EJ Main Characteristics Forward Current vs. Forward Voltage (Typical) 100 Ta = 25°C 10 150°C Forward Current IF (A) 1 Pulse test Per leg 0.1 01234 Forward Voltage VF (V) Capacitance vs. Reverse Voltage (Typical) 1000 Ta = 25°C 100 Capaitace Cj (pF) 10 1 10 100 1000 Reverse Voltage VR (V) Peak Forward Current IF (A) Reverse Recovery Time trr (ns) Preliminary Reverse Recovery Time vs. di/dt (Typical) 50 IF = 10 A Ta = 25°C 40 30 20 10 0 0 100 200 300 400 500 di/dt (A/µs) IF vs. Tc Characteristics (Typical) 25 Duty=0.01 20 Duty=0.2 Duty=0.5 15 10 DC 5 0 0 50 100 150 Case Temperature Tc (°C) R07DS0896EJ0300 Rev.3...