RJS6005TDPP-EJ
600V - 15A - Diode SiC Schottky Barrier Diode
Features
• New semiconductor material: Silicon Carbide Diod...
RJS6005TDPP-EJ
600V - 15A - Diode SiC
Schottky Barrier Diode
Features
New semiconductor material: Silicon Carbide Diode No reverse recovery / No forward recovery
Outline
RENESAS Package code: PRSS0002ZA-A (Package name: TO-220FP-2L)
12
Preliminary Datasheet
R07DS0900EJ0300 Rev.3.00
Jan 23, 2014
1 1. Cathode 2. Anode
2
Absolute Maximum Ratings
Item Maximum reverse voltage Continuous forward current Peak surge forward current Junction temperature Storage temperature
Electrical Characteristics
Symbol VRM IF IFSM Tj Tstg
Item Forward voltage Reverse current
Reverse recovery time
Symbol VF IR
trr
Min ⎯ ⎯
⎯
Typ 1.5 ⎯
15
Ratings 600 15 90 150
–55 to +150
(Ta = 25°C)
Unit V A A °C °C
(Ta = 25°C)
Max Unit
Test conditions
1.8 V IF = 15 A 10 μA VR = 600 V
⎯ ns IF = 15 A, di/dt = 300A/μs
R07DS0900EJ0300 Rev.3.00 Jan 23, 2014
Page 1 of 3
RJS6005TDPP-EJ
Main characteristics
Forward Current vs. Forward Voltage (Typical) 100
Ta = 25°C 10
150°C
Forward Current IF (A)
1
Pulse test 0.1
01234 Forward Voltage VF (V)
Capacitance vs. Reverse Voltage (Typical)
1000
Ta = 25°C
100
Capaitace Cj (pF)
10 1 10 100 1000
Reverse Voltage VR (V)
Peak Forward Current IF (A)
Reverse Recovery Time trr (ns)
Preliminary
Reverse Recovery Time vs. di/dt (Typical) 50
IF = 15 A Ta = 25°C 40
30
20
10
0 0 100 200 300 400 500 di/dt (A/µs)
IF vs. Tc Characteristics (Typical) 40
Duty=0.01 Duty=0.2
30 Duty=0.5
20 DC
10
0 0 50 100 150 Case Temperature Tc (°C)
R07DS0900EJ0300 Rev.3.00 Jan...