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VS-100BGQ015 Dataheets PDF



Part Number VS-100BGQ015
Manufacturers Vishay
Logo Vishay
Description Schottky Rectifier
Datasheet VS-100BGQ015 DatasheetVS-100BGQ015 Datasheet (PDF)

www.vishay.com VS-100BGQ015 Vishay Semiconductors Schottky Rectifier, 100 A Cathode Anode PowerTab® PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS PowerTab® 100 A 15 V 0.45 V 870 mA at 100 °C 125 °C Single die 9 mJ FEATURES • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • 125 °C max. operating junction temp.

  VS-100BGQ015   VS-100BGQ015


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www.vishay.com VS-100BGQ015 Vishay Semiconductors Schottky Rectifier, 100 A Cathode Anode PowerTab® PRODUCT SUMMARY Package IF(AV) VR VF at IF IRM TJ max. Diode variation EAS PowerTab® 100 A 15 V 0.45 V 870 mA at 100 °C 125 °C Single die 9 mJ FEATURES • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and long term reliability • Screw mounting only • Designed and qualified according to JEDEC-JESD47 • 125 °C max. operating junction temperature (VR < 5 V) • High frequency operation • Continuous high current operation • PowerTab® package • Compliant to RoHS Directive 2002/95/EC DESCRIPTION The VS-100BGQ015 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VRRM Rectangular waveform TC IFSM tp = 5 μs sine 100 Apk (typical) VF TJ TJ Range VALUES 100 88 15 5000 0.39 125 - 55 to 125 UNITS A °C V A V °C °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage SYMBOL VR TEST CONDITIONS TJ = 100 °C TJ = 125 °C VS-100BGQ015 15 5 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy Repetitive avalanche current EAS IAR TEST CONDITIONS 50 % duty cycle at TC = 88 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied TJ = 25 °C, IAS = 2 A, L = 4.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical VALUES 100 5000 1000 9 2 UNITS A A mJ A Revision: 15-Jun-11 1 Document Number: 94578 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com VS-100BGQ015 Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL Forward voltage drop VFM (1) Maximum reverse leakage current IRM (1) Maximum junction capacitance Typical series inductance Maximum voltage rate of change CT LS dV/dt Note (1) Pulse width < 300 μs, duty cycle < 2 % TEST CONDITIONS 50 A 100 A TJ = 25 °C 50 A 100 A TJ = 125 °C TJ = 100 °C, VR = 12 V TJ = 125 °C, VR = 5 V TJ = 25 °C TJ = 100 °C VR = Rated VR VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C Measured from tab to mounting plane Rated VR TYP. MAX. 0.36 0.4 0.45 0.52 0.27 0.31 0.39 0.45 480 700 1 1.2 7 18 580 870 3800 3.5 10 000 UNITS V mA A mA pF nH V/μs THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ Maximum storage temperature range Maximum thermal resistance, junction to case TStg RthJC DC operation Maximum thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device minimum maximum Case style PowerTab® VALUES UNITS - 55 to 125 - 55 to 150 °C 0.50 °C/W 0.30 5g 0.18 oz. 1.2 (10) 2.4 (20) N·m (lbf · in) 100BGQ015 Revision: 15-Jun-11 2 Document Number: 94578 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Instantaneous Forward Current-IF(A) www.vishay.com 1000 100 Tj = 125°C 10 Tj = 100°C Tj = 25°C Reverse Current-IR(mA) VS-100BGQ015 Vishay Semiconductors 1000 100 10 100°C 75°C 50°C 25°C 1 0 2 4 6 8 10 12 14 16 Reverse Voltage-VR(V) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage 10000 TJ = 25°C Junction Capacitance - C T (pF) Thermal Impedance ZthJC (°C/W) 1 0.0 0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop-VFM(V) Fig. 1 - Maximum Forward Voltage Drop Characteristics 1 D = 0.75 D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2 Single Pulse (Thermal Resistance) 1000 0 2 4 6 8 10 12 14 16 Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 0.01 1E-05 1E-04 1E-03 1E-02 1E-01 t1,RectangularPulseDuration(Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics 1E+00 Revision: 15-Jun-11 3 Document Number: 94578 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLA.


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