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VS-100BGQ015
Vishay Semiconductors
Schottky Rectifier, 100 A
Cathode
Anode
PowerTab®
PRODUCT SUMMARY
Package IF(AV) VR
VF at IF IRM
TJ max. Diode variation
EAS
PowerTab® 100 A 15 V 0.45 V
870 mA at 100 °C 125 °C
Single die 9 mJ
FEATURES • Ultralow forward voltage drop • Optimized for OR-ing applications • Guard ring for enhanced ruggedness and
long term reliability • Screw mounting only • Designed and qualified according to
JEDEC-JESD47 • 125 °C max. operating junction temperature (VR < 5 V) • High frequency operation • Continuous high current operation • PowerTab® package • Compliant to RoHS Directive 2002/95/EC
DESCRIPTION
The VS-100BGQ015 Schottky rectifier has been optimized for ultralow forward voltage drop specifically for the OR-ing of parallel power supplies. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in parallel switching power supplies, converters, reverse battery protection, and redundant power subsystems.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL
CHARACTERISTICS
IF(AV) VRRM
Rectangular waveform TC
IFSM tp = 5 μs sine
100 Apk (typical) VF
TJ TJ Range
VALUES 100 88 15 5000 0.39 125
- 55 to 125
UNITS A °C V A V °C °C
VOLTAGE RATINGS
PARAMETER
Maximum DC reverse voltage
SYMBOL VR
TEST CONDITIONS TJ = 100 °C TJ = 125 °C
VS-100BGQ015 15 5
UNITS V
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
Maximum average forward current
IF(AV)
Maximum peak one cycle non-repetitive surge current
IFSM
Non-repetitive avalanche energy Repetitive avalanche current
EAS IAR
TEST CONDITIONS
50 % duty cycle at TC = 88 °C, rectangular waveform
5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse
Following any rated load condition and with rated VRRM applied
TJ = 25 °C, IAS = 2 A, L = 4.5 mH Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 3 x VR typical
VALUES 100 5000 1000 9
2
UNITS A
A
mJ A
Revision: 15-Jun-11
1 Document Number: 94578
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
www.vishay.com
VS-100BGQ015
Vishay Semiconductors
ELECTRICAL SPECIFICATIONS
PARAMETER
SYMBOL
Forward voltage drop
VFM (1)
Maximum reverse leakage current
IRM (1)
Maximum junction capacitance Typical series inductance Maximum voltage rate of change
CT LS dV/dt
Note (1) Pulse width < 300 μs, duty cycle < 2 %
TEST CONDITIONS
50 A 100 A
TJ = 25 °C
50 A 100 A
TJ = 125 °C
TJ = 100 °C, VR = 12 V
TJ = 125 °C, VR = 5 V
TJ = 25 °C TJ = 100 °C
VR = Rated VR
VR = 5 VDC, (test signal range 100 kHz to 1 MHz), 25 °C
Measured from tab to mounting plane
Rated VR
TYP. MAX. 0.36 0.4 0.45 0.52 0.27 0.31 0.39 0.45 480 700
1 1.2 7 18 580 870
3800 3.5 10 000
UNITS
V
mA A mA pF nH V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
Maximum junction temperature range
TJ
Maximum storage temperature range
Maximum thermal resistance, junction to case
TStg RthJC
DC operation
Maximum thermal resistance, case to heatsink
RthCS
Mounting surface, smooth and greased
Approximate weight
Mounting torque Marking device
minimum maximum
Case style PowerTab®
VALUES
UNITS
- 55 to 125 - 55 to 150
°C
0.50 °C/W
0.30
5g
0.18 oz.
1.2 (10) 2.4 (20)
N·m (lbf · in)
100BGQ015
Revision: 15-Jun-11
2 Document Number: 94578
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Instantaneous Forward Current-IF(A)
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1000
100 Tj = 125°C
10 Tj = 100°C
Tj = 25°C
Reverse Current-IR(mA)
VS-100BGQ015
Vishay Semiconductors
1000 100 10
100°C 75°C 50°C 25°C
1 0 2 4 6 8 10 12 14 16
Reverse Voltage-VR(V) Fig. 2 - Typical Values of Reverse Current vs.
Reverse Voltage
10000
TJ = 25°C
Junction Capacitance - C T (pF)
Thermal Impedance ZthJC (°C/W)
1 0.0
0.2 0.4 0.6 0.8 1.0 Forward Voltage Drop-VFM(V)
Fig. 1 - Maximum Forward Voltage Drop Characteristics
1
D = 0.75
D = 0.5 D = 0.33 D = 0.25 0.1 D = 0.2
Single Pulse (Thermal Resistance)
1000 0 2 4 6 8 10 12 14 16
Reverse Voltage - VR (V) Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
0.01 1E-05
1E-04
1E-03
1E-02
1E-01
t1,RectangularPulseDuration(Seconds) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics
1E+00
Revision: 15-Jun-11
3 Document Number: 94578
For technical questions within your region:
[email protected],
[email protected],
[email protected]
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLA.