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BZT55B8V2 Dataheets PDF



Part Number BZT55B8V2
Manufacturers Vishay
Logo Vishay
Description Small Signal Zener Diodes
Datasheet BZT55B8V2 DatasheetBZT55B8V2 Datasheet (PDF)

www.vishay.com BZT55-Series Vishay Semiconductors Small Signal Zener Diodes LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 2.4 to 75 2.5 to 5 Pul.

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www.vishay.com BZT55-Series Vishay Semiconductors Small Signal Zener Diodes LINKS TO ADDITIONAL RESOURCES 3D 3D 3D Models FEATURES • Very sharp reverse characteristic • Low reverse current level • Very high stability • Low noise • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 APPLICATIONS • Voltage stabilization PRIMARY CHARACTERISTICS PARAMETER VALUE VZ range nom. Test current IZT VZ specification Circuit configuration 2.4 to 75 2.5 to 5 Pulse current Single UNIT V mA ORDERING INFORMATION DEVICE NAME ORDERING CODE BZT55-series BZT55-series-GS18 BZT55-series BZT55-series-GS08 TAPED UNITS PER REEL 10 000 per 13" reel 2500 per 7" reel MINIMUM ORDER QUANTITY 10 000/box 12 500/box PACKAGE PACKAGE NAME QuadroMELF (SOD-80) WEIGHT 34 mg MOLDING COMPOUND FLAMMABILITY RATING UL 94 V-0 MOISTURE SENSITIVITY LEVEL MSL level 1 (according J-STD-020) SOLDERING CONDITIONS 260 °C/10 s at terminals ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified) PARAMETER TEST CONDITION SYMBOL Power dissipation Zener current Junction to ambient air Junction temperature Storage temperature range Forward voltage (max.) RthJA ≤ 300 K/W On PC board 50 mm x 50 mm x 1.6 mm IF = 200 mA Ptot IZ RthJA Tj Tstg VF VALUE 500 PV/VZ 500 175 -65 to +175 1.5 UNIT mW mA K/W °C °C V Rev. 1.7, 25-Nov-2021 1 Document Number: 85637 For technical questions within your region: [email protected], [email protected], [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 www.vishay.com BZT55-Series Vishay Semiconductors ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified) ZENER VOLTAGE RANGE (1) TEST CURRENT REVERSE LEAKAGE CURRENT DYNAMIC RESISTANCE PART NUMBER VZ at IZT1 IR at VR IZT1 IZT2 Tamb = Tamb = 25 °C 150 °C ZZ at IZT1 ZZK at IZT2 f = 1 kHz V mA μA V Ω MIN. NOM. MAX. MAX. MAX. BZT55C2V4 2.28 2.4 2.56 5 1 < 50 < 100 1 < 85 < 600 BZT55C2V7 2.5 2.7 2.9 5 1 < 10 < 50 1 < 85 < 600 BZT55C3V0 2.8 3.0 3.2 5 1 <4 < 40 1 < 90 < 600 BZT55C3V3 3.1 3.3 3.5 5 1 <2 < 40 1 < 90 < 600 BZT55C3V6 3.4 3.6 3.8 5 1 <2 < 40 1 < 90 < 600 BZT55C3V9 3.7 3.9 4.1 5 1 <2 < 40 1 < 90 < 600 BZT55C4V3 4 4.3 4.6 5 1 <1 < 20 1 < 90 < 600 BZT55C4V7 4.4 4.7 5 5 1 < 0.5 < 10 1 < 80 < 600 BZT55C5V1 4.8 5.1 5.4 5 1 < 0.1 < 2 1 < 60 < 550 BZT55C5V6 5.2 5.6 6 5 1 < 0.1 < 2 1 < 40 < 450 BZT55C6V2 5.8 6.2 6.6 5 1 < 0.1 < 2 2 < 10 < 200 BZT55C6V8 6.4 6.8 7.2 5 1 < 0.1 < 2 3 <8 < 150 BZT55C7V5 7 7.5 7.9 5 1 < 0.1 < 2 5 <7 < 50 BZT55C8V2 7.7 8.2 8.7 5 1 < 0.1 < 2 6.2 <7 < 50 BZT55C9V1 8.5 9.1 9.6 5 1 < 0.1 < 2 6.8 < 10 < 50 BZT55C10 9.4 10 10.6 5 1 < 0.1 < 2 7.5 < 15 < 70 BZT55C11 10.4 11 11.6 5 1 < 0.1 < 2 8.2 < 20 < 70 BZT55C12 11.4 12 12.7 5 1 < 0.1 < 2 9.1 < 20 < 90 BZT55C13 12.4 13 14.1 5 1 < 0.1 < 2 10 < 26 < 110 BZT55C15 13.8 15 15.6 5 1 < 0.1 < 2 11 < 30 < 110 BZT55C16 15.3 16 17.1 5 1 < 0.1 < 2 12 < 40 < 170 BZT55C18 16.8 18 19.1 5 1 < 0.1 < 2 13 < 50 < 170 BZT55C20 18.8 20 21.2 5 1 < 0.1 < 2 15 < 55 < 220 BZT55C22 20.8 22 23.3 5 1 < 0.1 < 2 16 < 55 < 220 BZT55C24 22.8 24 25.6 5 1 < 0.1 < 2 18 < 80 < 220 BZT55C27 25.1 27 28.9 5 1 < 0.1 < 2 20 < 80 < 220 BZT55C30 28 30 32 5 1 < 0.1 < 2 22 < 80 < 220 BZT55C33 31 33 35 5 1 < 0.1 < 2 24 < 80 < 220 BZT55C36 34 36 38 5 1 < 0.1 < 2 27 < 80 < 220 BZT55C39 37 39 41 2.5 0.5 < 0.1 < 5 30 < 90 < 500 BZT55C43 40 43 46 2.5 0.5 < 0.1 < 5 33 < 90 < 600 BZT55C47 44 47 50 2.5 0.5 < 0.1 < 5 36 < 110 < 700 BZT55C51 48 51 54 2.5 0.5 < 0.1 < 10 39 < 125 < 700 BZT55C56 52 56 60 2.5 0.5 < 0.1 < 10 43 < 135 < 1000 BZT55C62 58 62 66 2.5 0.5 < 0.1 < 10 47 < 150 < 1000 BZT55C68 64 68 72 2.5 0.5 < 0.1 < 10 51 < 200 < 1000 BZT55C75 70 75 79 2.5 0.5 < 0.1 < 10 56 < 250 < 1500 Notes • Additional measurement of voltage group 9V1 to 75 at 95 % Vzmin. ≤ 35 nA at Tj 25 °C (1) tp ≤ 10 ms, T/tp > 1000 TEMPERATURE COEFFICIENT TKVZ %/K MIN. MAX. -0.09 -0.06 -0.09 -0.06 -0.08 -0.05 -0.08 -0.05 -0.08 -0.05 -0.08 -0.05 -0.06 -0.03 -0.05 0.02 -0.02 0.02 -0.05 0.05 0.03 0.06 0.03 0.07 0.03 0.07 0.03 0.08 0.03 0.09 0.03 0.1 0.03 0.11 0.03 0.11 0.03 0.11 0.03 0.11 0.03 0.11 0.03 0.11 0.03 0.11 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 0.04 0.12 Rev. 1.7, 25-Nov-2021 2 Document Number: 85637 For technical questions within your region: [email protected], [email protected], DiodesEurope@v.


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