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CPH3104 Dataheets PDF



Part Number CPH3104
Manufacturers Sanyo Semicon Device
Logo Sanyo Semicon Device
Description PNP Transistor
Datasheet CPH3104 DatasheetCPH3104 Datasheet (PDF)

Ordering number:EN6004 PNP/NPN Silicon Epitaxial Planar Transistors CPH3104/3204 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2150 [CPH3104/3204] 2.9 0.4 0.6 0.2 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. 1 1.9 3 0.

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Ordering number:EN6004 PNP/NPN Silicon Epitaxial Planar Transistors CPH3104/3204 DC/DC Converter Applications Applications · Relay drivers, lamp drivers, motor drivers, strobes. Package Dimensions unit:mm 2150 [CPH3104/3204] 2.9 0.4 0.6 0.2 Features · Adoption of FBET and MBIT processes. · High current capacitance. · Low collector-to-emitter saturation voltage. · Ultrasmall-sized package permitting applied sets to be made small and slim (0.9mm). · High allowable power dissipation. 1 1.9 3 0.15 0 to 0.1 1.6 2.8 2 0.6 ( ) : CPH3104 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Mounted on a ceramic board (600mm2×0.8mm) 0.7 0.9 1 : Base 2 : Emitter 3 : Collector SANYO : CPH3 Conditions 0.2 Ratings (–)15 (–)15 (–)5 (–)1.5 (–)3 (–)200 0.9 150 –55 to +150 Unit V V V A A mA W ˚C ˚C Electrical Characteristics at Ta = 25˚C Parameter Collector Cutoff Current Emitter Cutoff Current DC Current Gain Gain-Bandwidth Product Output Capacitance Symbol ICBO IEBO hFE1 hFE2 fT Cob VCB=(–)12V, IE=0 VEB=(–)4V, IC=0 VCE=(–)2V, IC=(–)50mA VCE=(–)2V, IC=(–)800mA VCE=(–)2V, IC=(–)50mA VCB=(–)10V, f=1MHz 200 80 (300) 200 (15)10 MHz MHz pF Conditions Ratings min typ max (–)100 (–)100 560 Unit nA nA Marking : CPH3104 : AD, CPH3204 : CD Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft’s control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 40599 (KOTO) TA-1452 No.6004–1/4 CPH3104/3204 Continued from preceding page. Parameter Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Symbol VCE(sat)1 VCE(sat)2 VBE(sat) Conditions IC=(–)5mA, IB=(–)0.5mA IC=(–)500mA, IB=(–)25mA IC=(–)500mA, IC=(–)25mA (–)15 (–)15 (–)5 Ratings min typ (–)10 (–)120 (–)0.9 max (–)25 (–)240 (–)1.2 Unit mV mV V V V V V(BR)CBO IC=(–)10µA, IE=0 V(BR)CEO IC=(–)1mA, RBE=∞ V(BR)EBO IC=(–)10µA, I.


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