BRIDGE RECTIFIER. DB103 Datasheet

DB103 RECTIFIER. Datasheet pdf. Equivalent

Part DB103
Description SILICON BRIDGE RECTIFIER
Feature WILLAS DB101 THRU FM1 T 1.0A SURFACSEINMGOSLIUELN-ICPTOHSANCSHBEORTGIDTLKGAYESBRSAERPCRATISEIFSRI.
Manufacture WILLAS
Datasheet
Download DB103 Datasheet



DB103
WILLAS
DB101
THRU
FM1
T
1.0A SURFACSEINMGOSLIUELN-ICPTOHSANCSHBEORTGIDTLKGAYESBRSAERPCRATISEIFSRIIERVRAECTETIDFIERS -20V- 2D00BV107
SOD-123+ PACKAGE
FM1
Pb Fr
VOLTAGE RANGE 50 to 1000 Volts
Features
CURRENT 1.0 AmPpearce kage outline
Batch process design, excellent power dissipation offers
FEATbUeRttEeSr reverse leakage current and thermal resistance.
* GoodLofowr paruotofimleastiuonrfaincseermtioonunted application in order to
SOD-123H
* Surgoepotvimerilzoeadboraatrindgs-p5a0cea.mperes peak
* IdeaLl ofowr pproinwteedr lcoirscsu,ithbigoharedfficiency.
* ReliaHbilgehlocwurcroesnt tccoanpstarbuciltiitoyn, luotwilizfoinrgwmarodldveodltage drop.
0.146(3.7)
0.130(3.3)
0.012(0.3) Ty
* GlasHs igpahsssuivragteedcadpeavibcielity.
*
*
*
MPWooe••luiagUGnrhittluittyn:raga1sry.dph0moriigsgbnihrotgai-losmsfnopm:reAooenlvddyeesrdvwooitnlctahbgoinedgyp. rotection.
* RoHSSpilriocdounctefopritpaaxckiainlgpcloadneasrucffhixip"G, "metal silicon junction.
HalogLeenafdre-efrperoedpucatrftosr mpaeckeitngencovdireosnumffixe"nHt"al standards of
MIL-STD-19500 /228
FEATRUoRHESSproduct for packing code suffix "G"
* EpoHxya:loUgLenflafrmemeapbriolitdyuccltafsosrifipcaactikoinng94cVo-d0e suffix "H"
.255(6.50)
~ ~ .245(6.20)
DB-1
0.071(1.8)
0.056(1.4)
.350(8.90)
.300(7.60)
Mechanical data* UL listed under the recognized component directory, file #E195711
Epoxy : UL94-V0 rated flame retardant
.346(8.8)
.307(7.8)
.135(3.40)
0.040(1.0)
0.024(0.6)
Case : Molded plastic, SOD-123H
MAXIMTUeMrmRinAaTlIsNG:PSlaAtNeDd EteLrEmCiTnRaIlCsA, sLoCldHeArRaAbCleTpEeRrISMTICLS-STD-750,
Ratings at 25 oC ambieMntettehmopdera2t0ur2e6unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capPaociltaivreitlyoa:dI,nddeircaatetecudrrbenyt cbay t2h0o%d. e band
.205(5.20)
.195(5.00)
.102(2.60)
0.031(0.8) Typ.
.165(4.80)
.020 .155(3.90)
(0.50)
MIN.
.060
0.031(0.8) T
D(1im.50e) nsions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
Dimensions in inches and (millimeters)
MAXIMUM RATINGSM(AtATAX=IM25oUC uMnlesRs oAthTerwINiseGnoStedA) ND ELECTRICAL CHARACTERISTICS
RATINGS
SYMBOL DB101
Ratings at 25℃ ambient temperature unless otherwise specified.
Maximum Recurrent Peak Reverse Voltage
VRRM
50
Single phase half wave, 60Hz, resistive of inductive load.
Maximum RMS Bridge Input Voltage
  For capacitive load, derate current by 20%
Maximum DC Blocking Voltage
VRMS
VDC
35
50
DB102
100
70
100
DB103
200
140
200
DB104
400
280
400
DB105
600
420
600
DB106
800
560
800
DB107
1000
700
1000
UNITS
Volts
Volts
Volts
Maximum Average ForwardROAutTpuINt CGurSrent at TA = 40oC
SYMBOLIO FM120-MH FM130-MH FM140-MH 1F.M0 150-MH FM160-MH FM180-MAHmFpsM1100-MH FM115
MaPrekaiknFgoCrwoadrdeSurge Current 8.3 ms single half sine-wave
MasuxpimeriummposReedcounrrraetendt lPoaeda(kJERDeEvCemrseethoVdo) ltage
12 13 14 15 16
VRRMIFSM 20 30 40 50 50 60
18 10
80 Amps 100
11
15
MaOxpiemrautimng aRnMd SStoVraogletaTgemeperature Range
VRMSTJ,TSTG 14
21
28 -65 to + 31550
42
56 0 C 70
10
Maximum DC Blocking Voltage
VDC 20 30 40 50 60
80 100 15
MELaExCimTRuImCAAL vCeHrAaRgAeCFToERrwISaTrIdCSR(eAtcTtiAfi=ed25CoCuurnrleesnstotherwise noted) IO
1.0
  CHARACTERISTICS
Peak Forward Surge Current 8.3 ms single half sine-wave
Maximum Forward Voltage Drop per Bridge
suEpleermimenptoast e1d.0AonDCrated load (JEDEC method)
TyMpaicxaimluTmhFeorrmwaarldRVeosltaisgteaDnrcoep (pNeroBterid2g)e @TA = 25oC
TyDpCicBallocJkuinngcVtioolntagCeapperaeclietamnencte (Note 1) @TA = 125oC
Operating Temperature Range
  SYMBOL
IFSM
VF
RΘJA
IR
CJ
TJ
DB101 DB102 DB103
 
 
-55 to +125
DB104
1.1
5.0
0.5
DB105
DB 106 DB107
30
40
120
 
UNITS
Volts
  uAmps
mAmps
-55 to +150
Storage Temperature Range
  2012.10
CHARACTERISTICS
TSTG
- 65 to +175
WILLAS ELECTRONIC CORP.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM1150
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.9



DB103
WILLAS
FM
T
1.0A SURFACREAMTINOGUANNTDSCCHHAORATCTTKEYRIBSTAICRRCUIERRVERSE(CDTBI1F0I1ETRHSR-U2D0VB1-0270)0V
SOD-123+ PACKAGE
FM1
Pb Fr
FIG. 1 - MAXIMUM NON-REPETITIVE FORWARD
Features SURGE CURRENT
B6a0tch process design, excellent power dissipation offers
better reverse leakage current and thermal resistance.
Low profile surface mounted application in order to
o5p0timize board space.
Low
power
loss,
8.3ms Single Half Sine-Wave
hig(hJEeDfEfDicMieethnocd)y.
H4i0gh current capability, low forward voltage drop.
High surge capability.
Guardring for overvoltage protection.
U3l0tra high-speed switching.
Silicon epitaxial planar chip, metal silicon junction.
L2e0ad-free parts meet environmental standards of
MIL-STD-19500 /228
RoHS product for packing code suffix "G"
H1a0logen free product for packing code suffix "H"
Mechanical data
1.0
.5
Ep0 oxy : UL94-V0 rated flame retardant
0 2 4 6 10 20 40 60 100
Case : MoNldUeMdBpElRasOtFicC, YSCOLDES-1A2T36H0Hz
Terminals :Plated terminals, solderable per
,
MIL-STD-750
0
20
PFaIGc. 2k- TaYDgPEIeCRAALToIFNuOGRtCWlUiARnRVeDECURRENT
SOD-123H
0.146(3.7)
0.130(3.3)
0.012(0.3) T
0.071(1.8)
0.056(1.4)
Single Phase Half Wave
60Hz Inductive or
Resistive Load
40 60 80 100 120
0A.0M31B(0I.E8)NTyTp.TEMPERATURE, (
0.040(1.0)
0.024(0.6)
140 150
)
0.031(0.8)
Method 2026
Polarity : Indicated by cathode band
Dimensions in inches and (millimeters)
Mounting Position : Any
Weight : Approximated 0.011 gram
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
FIG. 4 - TYPICAL REVERSE
MAXIMCUHMARRACATTERINISGTICSSAND ELECTRICAL CHARACTERISTICCSHARACTERISTICS
Ratings at1205℃ ambient temperature unless otherwise specified.
10
Single phase half wave, 60Hz, resistive of inductive load.
  For capacitive loP1a%uldsDe,uWtdyidCetyhrc=ale3t0e0ucs urrent by 20%
Marking Co1d.0e
RATINGS
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Voltage
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM11
12 113.0 14 15 16
18 10
11
VRRM
20
30
40
50
60
80 100 15
VRMS
14
21
28
35
42
56 70
10
Maximum DC Blocking Voltage
TJ = 25
0.1
Maximum Average Forward Rectified Current
VDC 20 30 40 50 TJ =6205
80 100 15
0.1
IO 1.0
 
Peak Forward Surge Current 8.3 ms single half sine-wave
superimposed on rated load (JEDEC method)
 
IFSM
Typical The.0rm1 al Resistance (Note 2)
Typical Juncti.o4n CapaI.cN6iStaTnAcNeT(.AN8NotEeO1U)S1.0FORWA1R.2D
Operating Temperature RangVeOLTAGE, (V)
RΘJA
1.4CJ
TJ
. 01
  0 20
-55 to +125
 
30
40  
 P4RE0ERVCEERN6S0TEOVFO  R8L0TA1AT2GE0DE1,0P(0%EA) K120-551t4o0+150
Storage Temperature Range
  2012.10 CHARACTERISTICS
TSTG
- 65 to +175
WILLAS ELECTRONIC CORP.
SYMBOL FM120-MH FM130-MH FM140-MH FM150-MH FM160-MH FM180-MH FM1100-MH FM115
Maximum Forward Voltage at 1.0A DC
VF
0.50
0.70
0.85
0.





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