FEATURES • InGaP HBT Technology • 2.5% EVM @ +28 dBm (OFDMA) • 31 dB Gain • Integrated Step Attenuator • Integrate...
FEATURES InGaP HBT Technology 2.5% EVM @ +28 dBm (OFDMA) 31 dB Gain Integrated Step Attenuator Integrated Output Power Detector High Efficiency Low
Transistor Junction Temperature Matched for a 50 Ω System Low Profile Miniature Surface Mount Package;
RoHS Compliant
APPLICATIONS WiMAX and LTE Air Interfaces Picocell, Femtocell, Home Nodes Customer Premises Equipment (CPE) Data Cards and Terminals
AWB7221
2.30 GHz to 2.70 GHz Small-Cell Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.1
M52 Package 14 Pin 7 mm x 7 mm x 1.3 mm
Surface Mount Module
PRODUCT DESCRIPTION The AWB7221 is a fully matched, Multi-Chip-Module (MCM) designed for picocell, femtocell, and customer premises equipment (CPE) applications. Its high linearity and efficiency meet the extremely demanding needs of small cell infrastructure architectures. Designed for WiMAX and LTE air interfaces operating in the 2.30 GHz to 2.70 GHz band, the AWB7221 delivers up to +28 dBm of WiMAX power with exceptionally low EVM. It operates from a convenient
+4.2 V supply and provides more than 30 dB of gain. The device is manufactured using an advanced InGaP HBT MMIC technology offering state-of-theart reliability, temperature stability, and ruggedness. The self-contained 7 mm x 7 mm x 1.3 mm surface mount package incorporates RF matching networks optimized for output power, efficiency, and linearity in a 50 Ω system.
Vcc 1 Vcc 2
RF Input
Step Attenuator
Bias Network
Matching...