Barrier Diode. ACDBCT320-HF Datasheet

ACDBCT320-HF Diode. Datasheet pdf. Equivalent

Part ACDBCT320-HF
Description SMD Schottky Barrier Diode
Feature SMD Schottky Barrier Diode ACDBCT320-HF Thru. ACDBCT3100-HF Forward current: 3.0A Reverse voltage.
Manufacture Comchip
Datasheet
Download ACDBCT320-HF Datasheet



ACDBCT320-HF
SMD Schottky Barrier Diode
ACDBCT320-HF Thru. ACDBCT3100-HF
Forward current: 3.0A
Reverse voltage: 20 to 100V
RoHS Device
Halogen Free
3220
Features
- Lead less chip form, no lead damage.
- Low power loss, High efficiency.
- High current capability, low VF
- Plastic package has UL 94V-0.
- Comply with AEC-Q101
Mechanical Data
- Case: Packed with FRP substrate and epoxy underfilled.
- Terminals: Pure Tin plated (Lead-Free), solderable
per MIL-STD-750, method 2026.
- Polarity: Laser cathode band marking.
- Weight: 0.093 grams (approx).
0.201(5.10)
0.193(4.90)
0.154(3.90)
Typ.
0.081(2.05)
0.073(1.85)
0.049(1.25)
0.037(0.95)
0.319(8.10)
0.311(7.90)
RR00.0.03321(0(0.8.728))
0.081(2.05)
0.073(1.85)
Dimensions in inches and (millimeter)
Circuit diagram
Maximum Ratings (At Ta=25°C, unless otherwise noted)
Parameter
Symbol ACDBCT320-HF ACDBCT340-HF ACDBCT360-HF ACDBCT3100-HF Unit
Non-repetitive peak reverse voltage
VRM
20
40
60 100 V
Average forward current
Peak forward surge current
@8.3ms single half sine-wave
IF(AV)
IFSM
3A
100 A
Operating junction temperature range
TJ
-55 to +125
-55 to +150
°C
Storage temperature
TSTG
-55 ~ +150
°C
Electrical Characteristics (At Ta=25°C, unless otherwise noted)
Parameter
Forward voltage (Note1)
Conditions
IF=0.5A
IF=1.0A
IF=3.0A
IF=0.5A
IF=1.0A
IF=3.0A
IF=0.5A
IF=1.0A
IF=3.0A
Type
ACDBCT320-HF
ACDBCT340-HF
ACDBCT360-HF
ACDBCT3100-HF
Symbol
VF
Min.
-
-
-
-
-
-
-
-
-
Typ.
0.33
0.38
0.47
0.38
0.48
0.65
0.48
0.58
0.78
Reverse peak reverse current
VR=Max.VRRM, Ta=25°C
IRRM
- 0.025
Junction capacitance
VR=4V, f=1.0MHz
Cj - 180
Thermal resistance
Junction to ambient (Note 2)
Junction to lead (Note 2)
RΘJA
RΘJL
-
-
55
17
Notes: (1) Pulse test width pw=300usec, 1% duty cycle.
(2)Mounted on P.C. board with 0.2*0.2”(5.0*5.0mm) copper pad areas.
Company reserves the right to improve product design , functions and reliability without notice.
AQW-JB002
Comchip Technology CO., LTD.
Max.
-
-
0.50
-
-
0.70
-
-
0.85
0.5
-
-
-
Unit
V
mA
pF
ºC/W
ºC/W
REV:C
Page 1



ACDBCT320-HF
SMD Schottky Barrier Diode
RATING AND CHARACTERISTIC CURVES (ACDBCT320-HF Thru. ACDBCT3100-HF)
Fig.1 - Typical Forward Current Derating Curve
3.0
2.0
1.0
Resistive or inductive load
P.C.B Mounted on 0.2*0.2”(5.0*5.0mm)
Copper pad areas
0
0 25 50 75 100 125 150 175
Case Temperature, (°C)
Fig.2 - Maximum Non-Repetitive Peak
Forward Surge Current
120
8.3ms Single Half Sine-Wave
(JEDEC Method)
100
80
60
40
20
0
1 10 100
Number of Cycles at 60Hz
Fig.3 - Typical Instantaneous Forward
Characteristics
10
1.00
0.1
0.01
0
ACDBCT320-HF Thru ACDBCT340-HF
ACDBCT360-HF
ACDBCT3100-HF
0.2 0.4 0.6 0.8 1.0
Instantaneous forward voltage, (V)
1.2
Fig.4 - Typical Reverse Characteristics
100
10
TJ=100°C
1.0
0.1
0.01
TJ=25 OC
0.001
0
20 40 60 80 100
Percent of Rated Peak Reverse Voltage, (%)
Fig.5 - Typical Junction Capacitance
400
TJ=25 OC
f=1MHz
Vsig=50mVP-P
100
10
0.1
1 10
Reverse Voltage, (V)
100
Company reserves the right to improve product design , functions and reliability without notice.
AQW-JB002
Comchip Technology CO., LTD.
REV:C
Page 2





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