Planar Transistor. BCP8050 Datasheet

BCP8050 Transistor. Datasheet pdf. Equivalent

Part BCP8050
Description NPN Epitaxial Planar Transistor
Feature Elektronische Bauelemente BCP8050 1.5A, 40V NPN Epitaxial Planar Transistor RoHS Compliant Product.
Manufacture SeCoS
Datasheet
Download BCP8050 Datasheet



BCP8050
Elektronische Bauelemente
BCP8050
1.5A, 40V
NPN Epitaxial Planar Transistor
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The BCP8050 is suited for the output stage of audio,
voltage regulator, and relay driver.
MARKING
Y1
SOT-89
4
123
A
EC
CLASSIFICATION OF hFE
Product Rank
BCP8050-C
Range
120~200
BCP8050-D
160~300
PACKAGE INFORMATION
Package
MPQ
SOT-89
1K
Leader Size
7’ inch
1
Base
BD
Collector
24
3
Emitter
FG
H
J
K
L
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
4.40
3.94
4.60
4.25
1.40 1.60
2.30 2.60
1.50 1.70
0.89
1.2
0
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.40 0.58
1.50 TYP
3.00 TYP
0.32 0.52
0.35 0.44
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current -Continuous
Total Power Dissipation
Junction & Storage temperature
Symbol
VCBO
VCEO
VEBO
IC
PD
TJ, TSTG
Ratings
40
25
5
1.5
0.5
150, -55~150
Unit
V
V
V
A
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown
vEomltiattgeer-base breakdown voltage
Collector cut-off current
Emitter cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Base-emitter saturation voltage
Base-emitter voltage
Base-emitter positive favor voltage
Transition frequency
Output Capacitance
Symbol
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
ICEO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE
VBEF
fT
COB
Min.
40
25
5
-
--
-
120
40
-
-
-
-
-
-
Typ.
-
-
-
-
-
-
-
-
-
-
-
-
100
15
Max.
-
-
-
0.1
0.1
0.1
300
-
0.5
1.2
1
1.55
-
-
Unit
V
V
V
µA
µA
µA
V
V
V
V
MHz
pF
Test Conditions
IC=100µA, IE=0
IC=0.1mA, IB=0
IE=100µA, IC=0
VCB=40V, IE=0
VCE=20V, IE=0
VEB=5V, IC=0
VCE=1V, IC= 0.1A
VCE=1V, IC= 0.8A
IC=800mA, IB=80mA
IC=800mA, IB=80mA
VCE=1V, IC=10mA
IB=1A
VCE=10V, IC=50mA, f=30MHz
VCB=10V, IE=0, f=1MHz
http://www.SeCoSGmbH.com/
23-Sep-2014 Rev. B
Any changes of specification will not be informed individually.
Page 1 of 2



BCP8050
Elektronische Bauelemente
CHARACTERISTIC CURVES
BCP8050
1.5A, 40V
NPN Epitaxial Planar Transistor
http://www.SeCoSGmbH.com/
23-Sep-2014 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 2





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