Triac. BCR16CM-12LA Datasheet

BCR16CM-12LA Triac. Datasheet pdf. Equivalent

Part BCR16CM-12LA
Description Triac
Feature BCR16CM-12LA Triac Medium Power Use Features • IT (RMS) : 16 A • VDRM : 600 V • IFGTI, IRGTI, IRGT I.
Manufacture Renesas
Datasheet
Download BCR16CM-12LA Datasheet



BCR16CM-12LA
BCR16CM-12LA
Triac
Medium Power Use
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGTI, IRGTI, IRGT III : 30 mA (20 mA)Note6
Outline
REJ03G0298-0300
Rev.3.00
Nov 30, 2007
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Contactless AC switch, light dimmer, electronic flasher unit, control of household equipment such as TV sets, stereo
systems, refrigerator, washing machine, infrared kotatsu, carpet, electric fan, solenoid driver, small motor control,
copying machine, electric tool, electric heater control, and other general purpose control applications
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
720
Unit
V
V
REJ03G0298-0300 Rev.3.00 Nov 30, 2007
Page 1 of 6



BCR16CM-12LA
BCR16CM-12LA
Parameter
RMS on-state current
Surge on-state current
I2t for fusing
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction temperature
Storage temperature
Mass
Notes: 1. Gate open.
Symbol
IT (RMS)
ITSM
I2t
PGM
PG (AV)
VGM
IGM
Tj
Tstg
Ratings
16
170
121
5.0
0.5
10
2
– 40 to +125
– 40 to +125
2.0
Unit
A
A
A2s
W
W
V
A
°C
°C
g
Conditions
Commercial frequency, sine full wave
360°conduction, Tc = 100°CNote3
60Hz sinewave 1 full cycle, peak value,
non-repetitive
Value corresponding to 1 cycle of half
wave 60Hz, surge on-state current
Typical value
Electrical Characteristics
Parameter
Symbol Min.
Typ.
Max.
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
Gate trigger voltageNote2
Gate trigger currentNote2
Ι
ΙΙ
ΙΙΙ
Ι
ΙΙ
ΙΙΙ
IDRM
VTM
VFGTΙ
VRGTΙ
VRGTΙΙΙ
IFGTΙ
IRGTΙ
IRGTΙΙΙ
— 2.0 mA Tj = 125°C, VDRM applied
— 1.5 V Tc = 25°C, ITM = 25 A,
Instantaneous measurement
— 1.5 V Tj = 25°C, VD = 6 V, RL = 6 ,
— 1.5 V RG = 330
— 1.5
V
30Note6
mA Tj = 25°C, VD = 6 V, RL = 6 ,
30Note6
mA RG = 330
30Note6
mA
Gate non-trigger voltage
Thermal resistance
VGD 0.2 — — V Tj = 125°C, VD = 1/2 VDRM
Rth (j-c)
1.4 °C/W Junction to caseNote3 Note4
Critical-rate of rise of off-state
(dv/dt)c
10
— V/µs Tj = 125°C
commutating voltageNote5
Notes: 2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature is measured at the T2 tab 1.5 mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0°C/W.
5. Test conditions of the critical-rate of rise of off-state commutating voltage is shown in the table below.
6. High sensitivity (IGT 20 mA) is also available. (IGT item: 1)
Test conditions
1. Junction temperature
Tj = 125°C
2. Rate of decay of on-state commutating current
(di/dt)c = – 8.0 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
REJ03G0298-0300 Rev.3.00 Nov 30, 2007
Page 2 of 6





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