Triac. BCR16CM-12LC Datasheet

BCR16CM-12LC Triac. Datasheet pdf. Equivalent

Part BCR16CM-12LC
Description Triac
Feature BCR16CM-12LC 600V - 16A - Triac Medium Power Use Preliminary Datasheet R07DS1031EJ0200 (Previous: R.
Manufacture Renesas
Datasheet
Download BCR16CM-12LC Datasheet



BCR16CM-12LC
BCR16CM-12LC
600V - 16A - Triac
Medium Power Use
Preliminary Datasheet
R07DS1031EJ0200
(Previous: REJ03G1804-0100)
Rev.2.00
Feb 25, 2013
Features
IT (RMS) : 16 A
VDRM : 600 V
IFGT I, IRGT I, IRGT III :50 mA
Outline
Non-Insulated Type
Planar Passivation Type
RENESAS Package code: PRSS0004AG-A
(Package name: TO-220AB)
4
123
RENESAS Package code: PRSS0004AA-A
(Package name: TO-220)
4
2, 4
123
3
1
1. T1 Terminal
2. T2 Terminal
3. Gate Terminal
4. T2 Terminal
Applications
Switching mode power supply, washing machine, motor control, heater control, and other general purpose control
applications.
Maximum Ratings
Parameter
Repetitive peak off-state voltageNote1
Non-repetitive peak off-state voltageNote1
Symbol
VDRM
VDSM
Voltage class
12
600
700
Unit
V
V
Parameter
RMS on-state current
Surge on-state current
I2t for fusion
Peak gate power dissipation
Average gate power dissipation
Peak gate voltage
Peak gate current
Junction Temperature
Storage temperature
Mass
Symbol
Ratings
Unit
Conditions
IT (RMS)
16
A Commercial frequency, sine full wave
360conduction, Tc = 110 C
ITSM 96 A 60 Hz sinewave 1 full cycle, peak value,
non-repetitive
I2t 38 A2s Value corresponding to 1 cycle of half
wave 60 Hz, surge on-state current
PGM
5W
PG (AV)
0.5
W
VGM 10 V
IGM 2 A
Tj
–40 to +150
C
Tstg
–40 to +150
C
— 2.1 g Typical value
R07DS1031EJ0200 Rev.2.00
Feb 25, 2013
Page 1 of 7



BCR16CM-12LC
BCR16CM-12LC
Preliminary
Electrical Characteristics
Parameter
Symbol
Rated value
Min. Typ. Max.
Unit
Test conditions
Repetitive peak off-state current
On-state voltage
IDRM
VTM
Gate trigger voltageNote2
Gate trigger curentNote2
VFGT
 VRGT
 VRGT
IFGT
 IRGT
 IRGT
— 2.0 mA Tj = 125C, VDRM applied
— 1.75
V Tc = 25C, ITM = 25A,
instantaneous measurement
— 1.5
— 1.5
V Tj = 25C, VD = 6 V, RL = 6 ,
V RG = 330
— 1.5
V
— 50 mA Tj = 25C, VD = 6 V, RL = 6 ,
— 50 mA RG = 330
— 50 mA
Gate non-trigger voltage
Thermal resistance
VGD 0.2 —
V Tj = 125C, VD = 1/2 VDRM
Rth (j-c)
1.8 C/W Junction to caseNote3, Note 4
Critical-rate of rise of off-state
(dv/dt)c 10
V/s Tj = 125C
commutation voltageNote5
Notes: 1. Gate open.
2. Measurement using the gate trigger characteristics measurement circuit.
3. Case temperature I measured at the T2 tab 1.5mm away from the molded case.
4. The contact thermal resistance Rth (c-f) in case of greasing is 1.0C/W.
5. Test conditions of the critical-rate of rise of off-state commutation voltage is shown in the table below.
Test conditions
1. Junction temperature
Tj = 125C
2. Rate of decay of on-state commutating current
(di/dt)c = –8 A/ms
3. Peak off-state voltage
VD = 400 V
Commutating voltage and current waveforms
(inductive load)
Supply Voltage
Time
Main Current
Main Voltage
(dv/dt)c
(di/dt)c
Time
Time
VD
R07DS1031EJ0200 Rev.2.00
Feb 25, 2013
Page 2 of 7





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