BCW61

SMD Type ■ Features ● Low current ● Low voltage ● General Purpose Transistor Transistors PNP Transistors BCW61 (KCW61) SOT-23-3 2.9 +0.2 -0.1 0.4 +0.1 -0.1 3 Unit: mm +0.21.6 -0.1 0.55 0.4 +0.22.8 -0.1 12 0.95 +0.1 -0.1 1.9 +0.1 -0.2 +0.21.1 -0.1 0.15 +0.02 -0.02 1. Base 2. Emitter 3. Collector 0-0.1 +0.10.68 -0.1 ■ Absolute Maximum Ratings Ta = 25℃ Parameter Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current - Continuous Collector Power Dissipation Junction Temperature Storage Temperature range Symbol VCBO VCEO VEBO IC PC TJ Tstg Rating -32 -32 -5 -100 250 150 -55 to 150 Unit V mA mW ℃ www.kexin.com.cn 1 SMD Type Transistors PNP Transistors BCW61 (KCW61) ■ Electrical Characteristics Ta = 25℃ Parameter Collector- base breakdown voltage Collector- emitter breakdown voltage Emitter - base breakdown voltage Collector-base cut-off current Emitter cut-off current Collector-emitter saturation voltage Base - emitter saturation voltage Base - emitter voltage DC current gain DC current gain DC current gain Collector output capacitance Collector input capacitance Transition frequency BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D BCW61A BCW61B BCW61C BCW61D Symbol Test Conditions VCBO Ic= -100 μA， IE=0 VCEO Ic= -1 mA， IB=0 VEBO IE= -100μA， IC=0 ICBO VCB= -32 V , IE=0 IEBO VEB= -4V , IC=0 IC=-10 mA, IB=-0.25mA VCE(sat) IC=-50 mA, IB=-1.25mA IC=-10 mA, IB=-0.25mA VBE(sat) IC=-50 mA, IB=-1.25mA VBE VCE= -5V, IC=...