Planar Transistors. BCW61 Datasheet

BCW61 Transistors. Datasheet pdf. Equivalent

Part BCW61
Description PNP Silicon Epitaxial Planar Transistors
Feature BCW61 PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification. Thes.
Manufacture SEMTECH
Datasheet
Download BCW61 Datasheet



BCW61
BCW61
PNP Silicon Epitaxial Planar Transistors
for general purpose switching and amplification.
These transistors are subdivided into three groups B,
C and D, according to their current gain.
As complementary types the NPN transistors
BCW60 are recommended.
SOT-23 Plastic Package
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Peak Base Current
Power Dissipation
Junction Temperature
Storage Temperature Range
Symbol
-VCBO
-VCEO
-VEBO
-IC
-ICM
-IBM
Ptot
TJ
TS
Value
32
32
5
100
200
100
200
150
-65 to +150
Unit
V
V
V
mA
mA
mA
mW
OC
OC
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005



BCW61
BCW61
Characteristics at Ta = 25 OC
Parameter
Symbol Min. Typ.
Max.
Unit
DC Current Gain
at -VCE = 5 V, -IC = 10 µA
at -VCE = 5 V, -IC = 2 mA
at -VCE = 1 V, -IC = 50 mA
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
hFE 30
-
-
-
hFE 40
-
-
-
hFE 100
-
-
-
hFE 180
-
310
-
hFE 250
-
460
-
hFE 380
-
630
-
hFE 80
-
-
-
hFE 100
-
-
-
hFE 110
-
-
-
Collector Saturation Voltage
at -IC = 10 mA, -IB = 0.25 mA
Collector Saturation Voltage
at -IC = 50 mA, -IB = 1.25 mA
Base Saturation Voltage
at -IC = 10 mA, -IB = 0.25 mA
Base Saturation Voltage
at -IC = 50 mA, -IB = 1.25 mA
Base-Emitter Voltage
at -IC = 2 mA, -VCE = 5 V
Collector Base Cutoff Current
at -VCB = 32 V
at -VCB = 32 V,Tj = 150 OC
Emitter-Base Cutoff Current
at -VEB = 4 V
-VCEsat
0.06
-VCEsat
0.12
-VBEsat
0.6
-VBEsat
0.68
-VBE(on)
0.6
-ICBO
-ICBO
-
-
-IEBO
-
-
-
-
-
-
-
-
-
0.25
0.55
0.85
1.05
0.75
20
20
20
V
V
V
V
V
nA
µA
nA
Gain -Bandwidth Product
at -VCE = 5 V, -IC = 10 mA, f = 100 MHz
fT 100 -
- MHz
Collector-Base Capacitance
at -VCB = 10 V, f = 1 MHz
CCBO - 4.5 - pF
Emitter-Base Capacitance
at -VEB = 0.5 V, f = 1 MHz
CEBO
-
11
-
pF
Noise figure
NF - 2
6 dB
at -IC = 200 µA, -VCE = 5 V, RS = 2 K, f = 1 KHz, Δf=200Hz
Thermal Resistance, Junction to Ambient
RθJA
-
-
500 1)
K/W
1) Transistor mounted on an FR4 printed-circuit board.
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 21/12/2005





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