BCW61

BCW61 PNP Silicon Epitaxial Planar Transistors for general purpose switching and amplification. These transistors are subdivided into three groups B, C and D, according to their current gain. As complementary types the NPN transistors BCW60 are recommended. SOT-23 Plastic Package Absolute Maximum Ratings (Ta = 25 OC) Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Peak Collector Current Peak Base Current Power Dissipation Junction Temperature Storage Temperature Range Symbol -VCBO -VCEO -VEBO -IC -ICM -IBM Ptot TJ TS Value 32 32 5 100 200 100 200 150 -65 to +150 Unit V V V mA mA mA mW OC OC SEMTECH ELECTRONICS LTD. (Subsidiary of Sino-Tech International Holdings Limited, a company listed on the Hong Kong Stock Exchange, Stock Code: 724) ® Dated : 21/12/2005 BCW61 Characteristics at Ta = 25 OC Parameter Symbol Min. Typ. Max. Unit DC Current Gain at -VCE = 5 V, -IC = 10 µA at -VCE = 5 V, -IC = 2 mA at -VCE = 1 V, -IC = 50 mA BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D hFE 30 - - - hFE 40 - - - hFE 100 - - - hFE 180 - 310 - hFE 250 - 460 - hFE 380 - 630 - hFE 80 - - - hFE 100 - - - hFE 110 - - - Collector Saturation Voltage at -IC = 10 mA, -IB = 0.25 mA Collector Saturation Voltage at -IC = 50 mA, -IB = 1.25 mA Base Saturation Voltage at -IC = 10 mA, -IB = 0.25 mA Base Saturation Voltage at -IC = 50 mA, -IB = 1.25 mA Base-Emitter Voltage at -IC = 2 mA, -VCE = ...