Document
BCW61B BCW61C BCW61D
SURFACE MOUNT PNP SILICON TRANSISTOR
CentralTM
Semiconductor Corp.
DESCRIPTION:
The CENTRAL SEMICONDUCTOR BCW61B Series types are PNP Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low level, low noise applications.
MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD
SOT-23 CASE
MAXIMUM RATINGS (TA=25°C) SYMBOL
Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Collector Current Power Dissipation Operating and Storage Junction Temperature Thermal Resistance
VCEO VCBO VEBO
IC PD
TJ,Tstg ΘJA
32 32 5.0 100 350
-65 to +150 357
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
SYMBOL ICES ICES BVCEO BVEBO VCE(SAT) VCE(SAT) VBE(SAT) VBE(SAT) VBE(ON) Cob NF ton ton
TEST CONDITIONS
MIN
VCE=32V
VCE=32V, TA=150°C
IC=2.0mA
32
IE=1.0µA
5.0
IC=10mA, IB=250µA
IC=50mA, IB=1.25mA
IC=10mA, IB=250µA
0.60
IC=50mA, IB=1.25mA
0.68
VCE=5.0V, IC=2.0mA
0.60
VCB=10V, IC=0, f=1.0MHz
VCE=5.0V, IC=0.2mA, RS=2.0kΩ, f=1.0kHz, BW=200Hz
VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA
VCC=10V, IC=10mA, RL=990Ω, IB1=IB2=1.0mA
MAX 20 20
0.25 0.55 0.85 1.05 0.75 6.0 6.0 dB 150 800
hFE VCE=5.0V, IC=10µA hFE VCE=5.0V, IC=2.0mA hFE VCE=1.0V, IC=50mA hfe VCE=5.0V, IC=2.0mA, f=1.0kHz
BCW61B MIN MAX 30
140 310
80
175 350
BCW61C MIN MAX 40
250 460
100
250 500
UNITS V V
V mA mW
°C °C/W
UNITS nA µA V V V V V V V pF
ns ns
BCW61D MIN MAX 100 380 630 100 350 700
R1 (20-February 2003)
CentralTM
Semiconductor Corp.
BCW61B BCW61C BCW61D
SURFACE MOUNT PNP SILICON TRANSISTOR
SOT-23 CASE - MECHANICAL OUTLINE
LEAD CODE: 1) BASE 2) EMITTER 3) COLLECTOR
MARKING CODES: BCW61B : BB BCW61C : BC BCW61D : BD
R1 (20-February 2003)
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