Encapsulated Transistor. BCW61C Datasheet

BCW61C Transistor. Datasheet pdf. Equivalent

Part BCW61C
Description PNP Plastic Encapsulated Transistor
Feature Elektronische Bauelemente BCW61C -0.1A , -32V PNP Plastic Encapsulated Transistor FEATURES Low cur.
Manufacture SeCoS
Datasheet
Download BCW61C Datasheet



BCW61C
Elektronische Bauelemente
BCW61C
-0.1A , -32V
PNP Plastic Encapsulated Transistor
FEATURES
Low current
Low voltage
MARKING :
BC
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
A
L
3
Top View
CB
12
KE
1
3
2
Leader Size
7 inch
1
Base
Collector
3
2
Emitter
D
F GH J
REF.
A
B
C
D
E
F
Millimeter
Min. Max.
2.80 3.04
2.10 2.55
1.20 1.40
0.89 1.15
1.78 2.04
0.30 0.50
REF.
G
H
J
K
L
Millimeter
Min. Max.
0.09 0.18
0.45 0.60
0.08 0.177
0.6 REF.
0.89 1.02
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Ratings
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction, Storage Temperature
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
-32
-32
-5
-100
0.25
150, -55~150
Unit
V
V
V
mA
W
°C
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified)
Parameter
Symbol Min. Typ. Max. Unit
Test Conditions
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown Voltage
Emitter to Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector to Emitter Saturation Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
IEBO
hFE (1)
hFE (2)
hFE (3)
VCE(sat)
Base to Emitter Saturation Voltage
VBE(sat)
Base to Emitter Voltage
Transition Frequency
Collector capacitance
Emitter capacitance
VBE
fT
Cc
Ce
-32
-32
-5
-
-
40
250
100
-0.06
-0.12
-0.6
-0.68
-
-0.6
-
100
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-0.55
-
-0.72
-
4.5
11
-
-
-
-0.02
-0.02
-
460
-
-0.25
-0.55
-0.85
-1.05
-
-0.75
-
-
-
-
V
V
V
µA
µA
V
V
V
V
V
V
V
MHz
pF
pF
IC= -10µA, IE=0
IC= -1mA, IB=0
IE= -10µA, IC=0
VCB=-32V, IE=0
VEB= -4V, IC=0
VCE= -5V, IC= -10µA
VCE= -5V, IC= -2mA
VCE= -1V, IC= -50mA
IC= -10mA, IB= -0.25mA
IC= -50mA, IB= -1.25mA
IC= -10mA, IB= -0.25mA
IC= -50mA, IB= -1.25mA
VCE= -5V, IC= -10µA
VCE= -5V, IC= -2mA
VCE= -1V, IC= -50mA
VCE= -5V, IC= -10mA, f=100MHZ
VCB= -10V, IE=0, f=1MHZ
VEB= -0.5V, Ic=0, f=1MHZ
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 1 of 2



BCW61C
Elektronische Bauelemente
CHARACTERISTIC CURVES
BCW61C
-0.1A , -32V
PNP Plastic Encapsulated Transistor
http://www.SeCoSGmbH.com/
15-Jul-2011 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 2





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