BCW61C

SMD Type General Purpose Transistor BCW61A/B/C/D TransistIoCrs Features PNP Epitaxial Silicon Transistor +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 unless otherwise noted Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Storage Temperature Symbol VCBO VCEO VEBO IC PC TSTG Rating -32 -32 -5 -100 350 -55 to +150 Unit V V V mA mW 0-0.1 +0.10.38 -0.1 +0.10.97 -0.1 +0.11.3 -0.1 0.55 0.4 Unit: mm 0.1+0.05 -0.01 1.Base 2.Emitter 3.collector www.kexin.com.cn 1 SMD Type TransistIoCrs BCW61A/B/C/D Electrical Characteristics Ta = 25 Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain DC current gain BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D BCW61B BCW61C BCW61D Collector-emitter saturation voltage Base to emitter saturation voltage Base to emitter voltage Collector capacitance Emitter capacitance Transition frequency * Noise figure * Pulse test: tp 300 ìs; d 0.02. Symbol ICBO ICBO IEBO hFE hFE hFE VCE(sat) VBE(sat) VBE CC Ce fT NF Testconditons IE = 0; VCB = -32 V IE = 0; VCB = -32 V; Tamb = 150 IC = 0; VEB = -4 V IC = -10ìA; VCE = -5 V IC = -2 mA; VCE = -5 V IC = -50 mA; VCE = -5 V IC = -10 mA; IB = -0.25 mA IC = -50 mA; IB = -1.25 mA IC = -10 mA; IB = -0.25 mA IC = -50 mA; IB = -1.25 mA IC = -2 mA; VCE = -5 V IE = ie = 0; VCB = -10 V; f = 1 MHz IC = ic = 0; VEB = -0.5 V; f = 1 MH...