Purpose Transistor. BCW61C Datasheet

BCW61C Transistor. Datasheet pdf. Equivalent

Part BCW61C
Description General Purpose Transistor
Feature SMD Type General Purpose Transistor BCW61A/B/C/D TransistIoCrs Features PNP Epitaxial Silicon Tra.
Manufacture Kexin
Datasheet
Download BCW61C Datasheet



BCW61C
SMD Type
General Purpose Transistor
BCW61A/B/C/D
TransistIoCrs
Features
PNP Epitaxial Silicon Transistor
SOT-23
2.9+0.1
-0.1
0.4+0.1
-0.1
3
12
0.95+0.1
-0.1
1.9+0.1
-0.1
Absolute Maximum Ratings Ta = 25 unless otherwise noted
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Power Dissipation
Storage Temperature
Symbol
VCBO
VCEO
VEBO
IC
PC
TSTG
Rating
-32
-32
-5
-100
350
-55 to +150
Unit
V
V
V
mA
mW
Unit: mm
0.1+0.05
-0.01
1.Base
2.Emitter
3.collector
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BCW61C
SMD Type
TransistIoCrs
BCW61A/B/C/D
Electrical Characteristics Ta = 25
Parameter
Collector cutoff current
Emitter cutoff current
DC current gain
DC current gain
DC current gain
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
BCW61B
BCW61C
BCW61D
Collector-emitter saturation voltage
Base to emitter saturation voltage
Base to emitter voltage
Collector capacitance
Emitter capacitance
Transition frequency *
Noise figure
* Pulse test: tp 300 ìs; d 0.02.
Symbol
ICBO
ICBO
IEBO
hFE
hFE
hFE
VCE(sat)
VBE(sat)
VBE
CC
Ce
fT
NF
Testconditons
IE = 0; VCB = -32 V
IE = 0; VCB = -32 V; Tamb = 150
IC = 0; VEB = -4 V
IC = -10ìA; VCE = -5 V
IC = -2 mA; VCE = -5 V
IC = -50 mA; VCE = -5 V
IC = -10 mA; IB = -0.25 mA
IC = -50 mA; IB = -1.25 mA
IC = -10 mA; IB = -0.25 mA
IC = -50 mA; IB = -1.25 mA
IC = -2 mA; VCE = -5 V
IE = ie = 0; VCB = -10 V; f = 1 MHz
IC = ic = 0; VEB = -0.5 V; f = 1 MHz
IC = -10 mA; VCE = -5 V; f = 100 MHz
IC = -200 ìA; VCE = -5 V; RS = 2 kÙ;
f = 1 kHz; B = 200 Hz
Min Typ Max
-20
-20
-20
30
40
100
180 310
250 460
380 630
80
100
110
-60 -250
-120 -550
-600 -850
-0.68
-1.05
-600 -650 -750
4.5
11
100
26
Unit
nA
ìA
nA
mV
mV
mV
V
mV
pF
pF
MHz
dB
Marking
TYPE
Marking
BCW61A
BA
BCW61B
BB
BCW61C
BC
BCW61D
BD
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