BCW61C

RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) FEATURES * Power dissipation PCM : 0.25 W (Tamb =25OC) BCW61C MECHANICAL DATA * Case: Molded plastic * Epoxy: UL 94V-O rate flame retardant * Lead: MIL-STD-202E method 208C guaranteed * Mounting position: Any * Weight: 0.008 gram MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25OC ambient temperature unless otherwise specified. Single phase , half wave, 60HZ, resistive or inductive load. For capacitive load, derate current by 20%. MAXIMUM RATINGS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current-continuous Total device dissipation Junction and storage temperature SYMBOL VCBO VCEO VEBO IC PC TJ ,Tstg ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Collector-base breakdown voltage (IC= -10mA, IE=0) Collector-emitter breakdown voltage (IC= -1mA, IB=0) Emitter-base breakdown voltage (IE= -10mA, IC=0) Collector cut-off current (VCB= -32V, IE=0) Collector cut-off current (VEB= -4V, IE=0) DC current gain (VCE= -5V, IC= -10mA) DC current gain (VCE= -5V, IC= -2mA) DC current gain (VCE= -1V, IC= -50mA) Collector-emitter saturation voltage (IC= -10mA, IB= -0.25mA) Collector-emitter saturation voltage (IC= -50mA, IB= -1.25mA) Base-emitter saturation voltage (IC= -10mA, IB= -0.25mA) Base-emitter saturation voltage (IC= -50mA, IB= -1.25mA) Base-emitter v...