Document
CBR1F-D020S SERIES
SURFACE MOUNT 1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR1F-D020S Series types are fast recovery, full wave bridge rectifiers mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING: FULL PART NUMBER
SMDIP CASE
MAXIMUM RATINGS: (TA=25°C unless otherwise specified) Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) Peak Forward Surge Current
Rating for Fusing (t<8.35ms)
Operating and Storage Junction Temperature
CBR1FSYMBOL D020S
VRRM VR
VR(RMS) IO
IFSM I2t
200 200 140
TJ, Tstg
CBR1FD040S
400
400
280
CBR1FD060S
600 600 420 1.0 50 3.74
CBR1FD080S
800
800
560
-65 to +150
CBR1FD100S
1000
1000
700
UNITS V V V A A A2s
°C
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP
IR VR=Rated VRRM
IR VR=Rated VRRM, TA=125°C
VF IF=1.0A
trr IF=0.5A, IR=1.0A, Rec. to 0.25A (200V, 300V, 400V)
trr IF=0.5A, IR=1.0A, Rec. to 0.25A (600V)
trr IF=0.5A, IR=1.0A, Rec. to 0.25A (800V, 1000V)
CJ VR=4.0V, f=1.0MHz
25
MAX 5.0 0.5 1.3 200 300 500
UNITS µA mA V ns ns ns pF
R1 (4-January 2010)
CBR1F-D020S SERIES SURFACE MOUNT
1 AMP FAST RECOVERY SILICON BRIDGE RECTIFIER
SMDIP CASE - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER w w w. c e n t r a l s e m i . c o m
R1 (4-January 2010)
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