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CBR35F-010P SERIES
FAST RECOVERY SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 600 VOLT
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DESCRIPTION: The CENTRAL SEMICONDUCTOR CBR35F-010P series devices are silicon, single phase, full wave bridge rectifiers designed for fast recovery applications. The molded epoxy case has a built-in metal baseplate for heat sink mounting. The device utilizes standard 0.25” FASTON terminals.
CASE FP
MARKING: FULL PART NUMBER
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) SYMBOL -010P
Peak Repetitive Reverse Voltage
VRRM 100
DC Blocking Voltage
VR 100
RMS Reverse Voltage
VR(RMS) 70
Average Forward Current (TC=60°C)
IO
Peak Forward Surge Current
IFSM
RMS Isolation Voltage (case to lead)
Viso
Operating and StorageJunction Temperature
TJ, Tstg
Thermal Resistance
ΘJC
CBR35F -020P -040P
200 400 200 400 140 280
35 400 2500 -65 to +150 1.5
-060P 600
600
420
UNITS V V V A A
Vac °C °C/W
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C) SYMBOL TEST CONDITIONS IR VR=Rated VRRM VF IF=17.5A
trr IF=0.5A, IR=1.0A, Irr=0.25A (100V, 200V, 400V)
trr IF=0.5A, IR=1.0A, Irr=0.25A (600V)
MIN
MAX 10 1.3
200
350
UNITS μA V
ns
ns
R1 (4-November 2013)
CBR35F-010P SERIES FAST RECOVERY
SILICON BRIDGE RECTIFIERS 35 AMP, 100 THRU 600 VOLT
CASE FP - MECHANICAL OUTLINE
MARKING: FULL PART NUMBER
w w w. c e n t r a l s e m i . c o m
R1 (4-November 2013)
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