SILICON BRIDGE RECTIFIERS
CBRHD-01 SURFACE MOUNT SILICON
HIGH DENSITY 0.8 AMP
BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
D...
Description
CBRHD-01 SURFACE MOUNT SILICON
HIGH DENSITY 0.8 AMP
BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips.
MARKING CODE: CBD1
FEATURES: Efficient use of board space: requires only 42mm2 of board
space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier.
50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier.
Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1) Average Forward Current (TA=40°C) (Note 2) Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
SYMBOL VRRM VR
VR(RMS) IO IO
IFSM TJ, Tstg
ΘJA
100 100 70 0.5 0.8 30 -65 to +150 85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR= 100V
5.0
IR VR= 100V, TA=125°C
500
VF IF=400mA
1.0
CJ VR=4.0V, f=1.0MHz
9.0
Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads.
UNITS V V V A A A °C
°C/W
UNITS µA µA V pF
R3 (22-August 2016)
CBRHD-01 SURFACE MOUNT SILICON
HIGH DENSITY 0.8 AMP
BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUT...
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