BRIDGE RECTIFIERS. CBRHD-01 Datasheet

CBRHD-01 RECTIFIERS. Datasheet pdf. Equivalent

Part CBRHD-01
Description SILICON BRIDGE RECTIFIERS
Feature CBRHD-01 SURFACE MOUNT SILICON HIGH DENSITY 0.8 AMP BRIDGE RECTIFIER HD DIP CASE w w w. c e n t r a.
Manufacture Central Semiconductor
Datasheet
Download CBRHD-01 Datasheet



CBRHD-01
CBRHD-01
SURFACE MOUNT SILICON
HIGH DENSITY
0.8 AMP
BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHD-01 is a
silicon full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CBD1
FEATURES:
Efficient use of board space: requires only 42mm2 of board
space vs. 120mm2 of board space needed for industry
standard 1.0 Amp surface mount bridge rectifier.
50% higher density (Amps/mm2) than the industry standard
1.0 Amp surface mount bridge rectifier.
Glass passivated chips for high reliability.
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current (TA=40°C) (Note1)
Average Forward Current (TA=40°C) (Note 2)
Peak Forward Surge Current
Operating and Storage Junction Temperature
Thermal Resistance (Note 3)
SYMBOL
VRRM
VR
VR(RMS)
IO
IO
IFSM
TJ, Tstg
ΘJA
100
100
70
0.5
0.8
30
-65 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR= 100V
5.0
IR VR= 100V, TA=125°C
500
VF IF=400mA
1.0
CJ VR=4.0V, f=1.0MHz
9.0
Notes: (1) Mounted on Glass-Epoxy PCB.
(2) Mounted on Ceramic PCB.
(3) Mounted on PCB with 0.5” x 0.5” copper pads.
UNITS
V
V
V
A
A
A
°C
°C/W
UNITS
µA
µA
V
pF
R3 (22-August 2016)



CBRHD-01
CBRHD-01
SURFACE MOUNT SILICON
HIGH DENSITY
0.8 AMP
BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
MARKING CODE: CBD1
R3 (22-August 2016)





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