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CBRHD-01

Central Semiconductor

SILICON BRIDGE RECTIFIERS

CBRHD-01 SURFACE MOUNT SILICON HIGH DENSITY 0.8 AMP BRIDGE RECTIFIER HD DIP CASE w w w. c e n t r a l s e m i . c o m D...


Central Semiconductor

CBRHD-01

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Description
CBRHD-01 SURFACE MOUNT SILICON HIGH DENSITY 0.8 AMP BRIDGE RECTIFIER HD DIP CASE w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR CBRHD-01 is a silicon full wave bridge rectifier mounted in a durable epoxy surface mount molded case, utilizing glass passivated chips. MARKING CODE: CBD1 FEATURES: Efficient use of board space: requires only 42mm2 of board space vs. 120mm2 of board space needed for industry standard 1.0 Amp surface mount bridge rectifier. 50% higher density (Amps/mm2) than the industry standard 1.0 Amp surface mount bridge rectifier. Glass passivated chips for high reliability. MAXIMUM RATINGS: (TA=25°C unless otherwise noted) Peak Repetitive Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Forward Current (TA=40°C) (Note1) Average Forward Current (TA=40°C) (Note 2) Peak Forward Surge Current Operating and Storage Junction Temperature Thermal Resistance (Note 3) SYMBOL VRRM VR VR(RMS) IO IO IFSM TJ, Tstg ΘJA 100 100 70 0.5 0.8 30 -65 to +150 85 ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted) SYMBOL TEST CONDITIONS TYP MAX IR VR= 100V 5.0 IR VR= 100V, TA=125°C 500 VF IF=400mA 1.0 CJ VR=4.0V, f=1.0MHz 9.0 Notes: (1) Mounted on Glass-Epoxy PCB. (2) Mounted on Ceramic PCB. (3) Mounted on PCB with 0.5” x 0.5” copper pads. UNITS V V V A A A °C °C/W UNITS µA µA V pF R3 (22-August 2016) CBRHD-01 SURFACE MOUNT SILICON HIGH DENSITY 0.8 AMP BRIDGE RECTIFIER HD DIP CASE - MECHANICAL OUT...




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