BRIDGE RECTIFIER. CBRHDSH1-100 Datasheet

CBRHDSH1-100 RECTIFIER. Datasheet pdf. Equivalent

Part CBRHDSH1-100
Description SCHOTTKY BRIDGE RECTIFIER
Feature CBRHDSH1-100 SURFACE MOUNT HIGH DENSITY 1 AMP SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE w w w. .
Manufacture Central Semiconductor
Datasheet
Download CBRHDSH1-100 Datasheet



CBRHDSH1-100
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-100
is a full wave bridge rectifier in a durable epoxy surface
mount molded case, designed for low voltage full wave
rectification applications. The molding compound used
in this device has UL flammability classification 94V-O.
MARKING CODE: CSH110
FEATURES:
Low Leakage Current (40nA TYP @ VRRM)
Low Forward Voltage Drop Schottky Diodes
High 1.0A Current Rating
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
SYMBOL
Peak Repetitive Reverse Voltage
VRRM
DC Blocking Voltage
VR
RMS Reverse Voltage
VR(RMS)
Average Forward Current
IO
Peak Forward Surge Current
IFSM
Power Dissipation
PD
Operating Junction Temperature
TJ
Storage Temperature
Tstg
Thermal Resistance
ΘJA
100
100
71
1.0
20
1.2
-50 to +125
-55 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
MIN TYP MAX
IR VR=100V
0.04 10
IR VR=100V, TA=50°C
1.0
IR VR=100V, TA=100°C
20
BVR
IR=150μA
100
VF IF=500mA
615 700
VF IF=1.0A
690 750
CJ VR=4.0V, f=1.0MHz
230
UNITS
V
V
V
A
A
W
°C
°C
°C/W
UNITS
μA
mA
mA
V
mV
mV
pF
R6 (22-May 2012)



CBRHDSH1-100
CBRHDSH1-100
SURFACE MOUNT
HIGH DENSITY
1 AMP SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
MARKING CODE: CSH110
R6 (22-May 2012)





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