BRIDGE RECTIFIER. CBRHDSH1-40L Datasheet

CBRHDSH1-40L RECTIFIER. Datasheet pdf. Equivalent

Part CBRHDSH1-40L
Description SCHOTTKY BRIDGE RECTIFIER
Feature CBRHDSH1-40L SURFACE MOUNT HIGH DENSITY 1 AMP LOW VF SILICON SCHOTTKY BRIDGE RECTIFIER HD DIP CASE .
Manufacture Central Semiconductor
Datasheet
Download CBRHDSH1-40L Datasheet



CBRHDSH1-40L
CBRHDSH1-40L
SURFACE MOUNT
HIGH DENSITY
1 AMP LOW VF SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE
w w w. c e n t r a l s e m i . c o m
DESCRIPTION:
The CENTRAL SEMICONDUCTOR CBRHDSH1-40L
is a full wave bridge rectifier mounted in a durable
epoxy surface mount molded case, utilizing glass
passivated chips.
MARKING CODE: CSH1
FEATURES:
Low Leakage Current (20µA TYP @ VRRM)
High 1.0A Current Rating
Low VF Schottky Diodes (440mV MAX @ IF=1.0A)
MAXIMUM RATINGS: (TA=25°C unless otherwise noted)
Peak Repetitive Reverse Voltage
DC Blocking Voltage
RMS Reverse Voltage
Average Forward Current
Peak Repetitive Forward Current
Peak Forward Surge Current
Power Dissipation
Operating Junction Temperature
Storage Temperature
Thermal Resistance
SYMBOL
VRRM
VR
VR(RMS)
IO
IFRM
IFSM
PD
TJ
Tstg
ΘJA
40
40
28
1.2
1.7
20
1.2
-50 to +125
-50 to +150
85
ELECTRICAL CHARACTERISTICS PER DIODE: (TA=25°C unless otherwise noted)
SYMBOL TEST CONDITIONS
TYP MAX
IR VR=40V
IR VR=40V, TA=100°C
VF IF=500mA
VF IF=1.0A
CJ VR=4.0V, f=1.0MHz
20 50
5.0 20
360 380
390 440
150
UNITS
V
V
V
A
A
A
W
°C
°C
°C/W
UNITS
µA
mA
mV
mV
pF
R4 (4-January 2010)



CBRHDSH1-40L
CBRHDSH1-40L
SURFACE MOUNT
HIGH DENSITY
1 AMP LOW VF SILICON
SCHOTTKY BRIDGE RECTIFIER
HD DIP CASE - MECHANICAL OUTLINE
w w w. c e n t r a l s e m i . c o m
MARKING CODE: CSH1
R4 (4-January 2010)





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