LED16FC

LED16FC TECHNICAL DATA Mid-Infrared Light Emitting Diode, Flip-Chip Design Light Emitting Diodes with central wavelength 1.65 µm series are based on heterostructures grown on GaSb substrates by LPE. Solid solutions AlGaAsSb are used in the active layer. Wide band gap solid solutions AlGaAsSb with Al content 64% are used for good electron confinement. LED16FC has a stable ouput power and a lifetime more then 80000 hours. Features Structure: GaInAsSb/AlGaAsSb, Flip-Chip Design Peak Wavelength: typ. 1.65 µm Optical Ouput Power: typ. 1.2 mW qCW Package: TO-18, with cap and window Specifications Item Peak Wavelength FWHM Quasi-CW Optical Power Pulsed Optical Power Switching Time Operation Voltage Operating Temperature Emitting Area Soldering Temperature Package Condition T=300 K 150 mA CW 200 mA qCW Min. 1.60 100 0.8 Rating Typ. 1.65 150 1.2 Max. 1.69 200 2 Unit µm nm mW 1 A 20 30 40 mW T=300 K 200 mA qCW 10 20 30 ns V -240 … +50 °C 670x770 µm 180 °C TO-18, with non-removeable cap and transparent window (Unit: mm) Operating Regime Quasi-CW Maximum current 220 mA Recommended current 150-200mA Pulsed Maximum current 1 A (puls lenght 500 ns, repetition rate 2kHz) 06.10.2010 LED16FC 1 of 2 Typical Performance Curves 06.10.2010 LED16FC 2 of 2 ...