CPH3414

Ordering number : ENN6862 CPH3414 N-Channel Silicon MOSFET CPH3414 Ultrahigh-Speed Switching Applications Features Low ON-resistance. Ultrahigh-speed switching. 4V drive. Package Dimensions unit : mm 2152A [CPH3414] 0.4 0.6 3 0.05 1 1.9 2 0.6 1.6 2.8 Specifications Absolute Maximum Ratings at Ta=25°C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (900mm2!0.8mm) Conditions 0.7 0.9 1 : Gate 2 : Source 3 : Drain SANYO : CPH3 0.2 Ratings 30 ± 20 2.2 8.8 1.0 150 --55 to +150 0.2 2.9 0.15 Unit V V A A W °C °C Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs RDS(on)1 RDS(on)2 Conditions ID=1mA, VGS=0 VDS=30V, VGS=0 VGS=± 16V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=1A ID=1A, VGS=10V ID=0.5A, VGS=4V Ratings min 30 1 ± 10 1.2 1.4 2.0 115 190 150 270 2.6 typ max Unit V µA µA V S mΩ mΩ Marking : KP Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or...