CPH5601

Ordering number:ENN6439 P-Channel Silicon MOSFET CPH5601 Ultrahigh-Speed Switching Applications Features · Low ON resistance. · Ultrahigh-speed switching. · 2.5V drive. · Composite type with 2 MOSFETs contained in a single package, facilitaing high-density mounting. Package Dimensions unit:mm 2168 [CPH5601] 2.9 5 4 3 0.6 0.2 0.15 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions 0.4 1 : Drain1 2 : Drain2 3 : Gate2 4 : Source 5 : Gate1 SANYO : CPH5 0.2 0.7 0.9 Ratings –20 ±10 –1.0 –4.0 0.9 150 –55 to +150 Unit V V A A W ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) 1unit Electrical Characteristics at Ta = 25˚C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Symbol V(BR)DSS IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 Ciss Coss Crss ID=–1mA, VGS=0 VDS=–20V, VGS=0 VGS=±8V, VDS=0 VDS=–10V, ID=–1mA VDS=–10V, ID=–500mA ID=–500mA, VGS=–4V ID=–300mA, VGS=–2.5V VDS=–10V, f=1MHz VDS=–10V, f=1MHz VDS=–10V, f=1MHz –0.4 1.0 1.4 420 630 100 60 25 550 890 Conditions Ratings min –20 –10 ±10 –1.4 typ m...