CPH5701

Ordering number:ENN6319 TR : PNP Epitaxial Planar Silicon Transistor SBD : Schottky Barrier Diode CPH5701 DC/DC Converter Applications Features · Composite type with a PNP transistor and a Schottky barrier diode contained in one package facilitating high-density mounting. · Each device incorporated in the CPH5701 is equivalent to the CPH3106 and to the SBS004, respectively. · Ultrasmall package facilitates miniaturization in end products. Package Dimensions unit:mm 2156 [CPH5701] 2.9 5 4 3 0.6 1 0.95 2 0.4 0.6 1.6 2.8 0.05 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter [TR] Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature [SBD] Repetitive Peak Reverse Voltage Non-repetitive Peak Reverse Surge Voltage Average Output Current Surge Current Junction Temperature Storage Temperature VRRM VRSM IO IFSM Tj Tstg 50Hz sine wave, 1 cycle VCBO VCEO VEBO IC ICP IB PC Tj Tstg Symbol Conditions 0.4 1 : Cathode 2 : Collector 3 : Base 4 : Emitter 5 : Anode SANYO : CPH5 0.2 0.7 0.9 Ratings –15 –12 –5 –3 –5 –600 0.2 0.15 Unit V V V A A mA W ˚C ˚C V V A A ˚C ˚C Mounted on a ceramic board (600mm2×0.8mm) 0.9 150 –55 to +125 15 15 1 10 –55 to +125 –55 to +125 Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliab...