XBS306S17R-G

XBS306S17R-G Schottky Barrier Diode, 3A, 60V Type ETR1616-002a ■FEATURES Forward Voltage Forward Current Repetitive Peak Reverse Voltage : VF=0.59V (TYP.) : IF(AVE)=3A : VRM=60V ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER SYMBOL RATINGS UNIT Repetitive Peak Reverse Voltage VRM 60 V Reverse Voltage (DC) VR 60 V Forward Current (Average) IF(AVE) 3 A Non Continuous Forward Surge Current*1 IFSM 50 Junction Temperature Tj 125 Storage Temperature Range Tstg -55～+150 *1： Non continuous high amplitude 60Hz half-sine wave. A ℃ ℃ ■APPLICATIONS ●Rectification ●Protection against reverse connection of battery ■PACKAGING INFORMATION ■MARKING RULE Cathode Bar ①②③④⑤⑥: 306S17(Product Number) ⑦⑧ : Assembly Lot Number ■PRODUCT NAME PRODUCT NAME DEVICE ORIENTATION XBS306S17 R-G SMA (Halogen & Antimony free) XBS306S17 R SMA * The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed in its embossed tape pocket. ■ELECTRICAL CHARACTERISTICS PARAMETER Forward Voltage Reverse Current Inter-Terminal Capacity Reverse Recovery Time*2 *2：trr measurement circuit SYMBOL TEST CONDITIONS VF1 IF=200μA VF2 IF=3A IR1 VR=30V IR2 VR=60V Ct VR=1V , f=1MHz trr IF=IR=10mA , irr=1mA Bias Device Under test SMA MIN. - Unit: mm LIMITS TYP. 0.145 0.59 3 9 195 55 Ta=25℃ MAX. - 0.66 - 300 - UNIT V V μA μA pF ns Pulse Generatrix Oscilloscope 1/3 XBS306S17R-G ■TYPICAL PERFORMANCE CHARA...