XBS306S17R-G Diode Datasheet

XBS306S17R-G Datasheet, PDF, Equivalent


Part Number

XBS306S17R-G

Description

Schottky Barrier Diode

Manufacture

Torex Semiconductor

Total Page 3 Pages
Datasheet
Download XBS306S17R-G Datasheet


XBS306S17R-G
XBS306S17R-G
Schottky Barrier Diode, 3A, 60V Type
ETR1616-002a
FEATURES
Forward Voltage
Forward Current
Repetitive Peak Reverse Voltage
: VF=0.59V (TYP.)
: IF(AVE)=3A
: VRM=60V
ABSOLUTE MAXIMUM RATINGS
Ta=25
PARAMETER
SYMBOL RATINGS UNIT
Repetitive Peak Reverse Voltage VRM
60 V
Reverse Voltage (DC)
VR 60 V
Forward Current (Average)
IF(AVE) 3 A
Non Continuous
Forward Surge Current*1
IFSM
50
Junction Temperature
Tj 125
Storage Temperature Range
Tstg -55+150
*1Non continuous high amplitude 60Hz half-sine wave.
A
APPLICATIONS
Rectification
Protection against reverse connection of battery
PACKAGING INFORMATION
MARKING RULE
Cathode Bar
①②③④⑤⑥: 306S17(Product Number)
⑦⑧
: Assembly Lot Number
PRODUCT NAME
PRODUCT NAME
DEVICE ORIENTATION
XBS306S17 R-G
SMA (Halogen & Antimony free)
XBS306S17 R
SMA
* The “-G” suffix indicates that the products are Halogen and Antimony free as well as being fully RoHS compliant.
* The device orientation is fixed in its embossed tape pocket.
ELECTRICAL CHARACTERISTICS
PARAMETER
Forward Voltage
Reverse Current
Inter-Terminal Capacity
Reverse Recovery Time*2
*2trr measurement circuit
SYMBOL
TEST CONDITIONS
VF1 IF=200μA
VF2 IF=3A
IR1 VR=30V
IR2 VR=60V
Ct VR=1V , f=1MHz
trr IF=IR=10mA , irr=1mA
Bias Device Under test
SMA
MIN.
-
-
-
-
-
-
Unit: mm
LIMITS
TYP.
0.145
0.59
3
9
195
55
Ta=25
MAX.
-
0.66
-
300
-
-
UNIT
V
V
μA
μA
pF
ns
Pulse Generatrix
Oscilloscope
1/3

XBS306S17R-G
XBS306S17R-G
TYPICAL PERFORMANCE CHARACTERISTICS
(1) Forward Current vs. Forward Voltage
(2) Reverse Current vs. Reverse Voltage
10
Ta=125℃
-25℃
1
10000
1000
100
Ta=125℃
100℃
75℃
0.1 75℃
25℃
10
25℃
1
0.01
0
0.2 0.4 0.6
FoFrowrawradrdVVolotaltgaege:  VVF (FV(V) )
(3) Forward Voltage vs. Operating Temperature
0.8
0.8
0.6
IF=3A
0.4 1.5A
0.5A
0.2
0.1A
0.1
0
20 40
RReevveerrsseeVVooltlataggee: VVRR(V(V))
(4) Reverse Current vs. Operating Temperature
60
10000
1000
VR=40V
20V
10V
5V
100
10
0.0
-50
0
50 100
OpOepreartiantginTgeTmepmepreartautruer:eT aT(a(℃) )
(5) Inter-Terminal Capacity vs. Reverse Voltage
150
500
1
0 50 100 150
OOppeerraattiningg TTeemmppeerraattuurree: TTaa((℃))
(6) Average Forward Current vs. Operating Temperature
5.0
400 4.0
300 3.0
200 2.0
100
0
0
Ta=25℃
10 20 30
ReRveevresreseVoVltoaltgaeg:eV RV(RV()V)
40
1.0
0.0
0
50 100
OOppeerraattiinngg TTeemmppeerraattuurree : TTaa (())
150
2/3


Features XBS306S17R-G Schottky Barrier Diode, 3A, 60V Type ETR1616-002a ■FEATURES F orward Voltage Forward Current Repetiti ve Peak Reverse Voltage : VF=0.59V (TY P.) : IF(AVE)=3A : VRM=60V ■ABSOLUTE MAXIMUM RATINGS Ta=25℃ PARAMETER S YMBOL RATINGS UNIT Repetitive Peak Rev erse Voltage VRM 60 V Reverse Voltage (DC) VR 60 V Forward Current (Averag e) IF(AVE) 3 A Non Continuous Forward Surge Current*1 IFSM 50 Junction Te mperature Tj 125 Storage Temperature Range Tstg -55~+150 *1: Non conti nuous high amplitude 60Hz half-sine wav e. A ℃ ℃ ■APPLICATIONS ●Recti fication ●Protection against reverse connection of battery ■PACKAGING INFO RMATION ■MARKING RULE Cathode Bar ①②③④⑤⑥: 306S17(Product Numb er) ⑦⑧ : Assembly Lot Number ■ PRODUCT NAME PRODUCT NAME DEVICE ORIE NTATION XBS306S17 R-G SMA (Halogen & Antimony free) XBS306S17 R SMA * The “-G” suffix indicates that the pro ducts are Halogen and Antimony free as well as being fully RoHS compliant. * The device orientation is fixed .
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