Effect Transistor. STF8236 Datasheet

STF8236 Transistor. Datasheet pdf. Equivalent

Part STF8236
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Feature STF8236Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect T.
Manufacture SamHop Microelectronics
Datasheet
Download STF8236 Datasheet



STF8236
STF8236Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS
20V
ID RDS(ON) (mΩ) Max
22.0 @ VGS=4.5V
22.5 @ VGS=4.0V
6A 23.0 @ VGS=3.7V
25.0 @ VGS=3.1V
29.0 @ VGS=2.5V
FEATURES
Super high dense cell design for low RDS(ON).
Rugged and reliable.
Suface Mount Package.
ESD Protected.
PIN 1
S1
S1
G1
D1/D2
S2
S2
G2
DFN 2X2
Bottom Drain Contact (D1/D2)
G1 3
4 G2
S1 2
5 S2
S1 1
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol
VDS
VGS
ID
IDM
Parameter
Drain-Source Voltage
Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C
TA=70°C
PD
Maximum Power Dissipation
TA=25°C
TA=70°C
TJ, TSTG
Operating Junction and Storage
Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit
20
±12
6
4.8
36
1.4
0.9
-55 to 150
90
Units
V
V
A
A
A
W
W
°C
°C/W
Details are subject to change without notice.
1
Oct,24,2014
www.samhop.com.tw



STF8236
STF8236
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS
BVDSS Drain-Source Breakdown Voltage
IDSS Zero Gate Voltage Drain Current
IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA
VDS=16V , VGS=0V
VGS= ±8V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr
tD(OFF)
Rise Time
Turn-Off Delay Time
tf Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
VDS=VGS , ID=1.0mA
VGS=4.5V , ID=3.0A
VGS=4.0V , ID=3.0A
VGS=3.7V , ID=3.0A
VGS=3.1V , ID=3.0A
VGS=2.5V , ID=1.5A
VDS=5V , ID=3A
VDD=16V
ID=3A
VGS=4.5V
RGEN= 6 ohm
VDS=16V,ID=6A,
VGS=4.5V
0.5
14.0
14.5
15.0
15.5
17.5
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
VSD Diode Forward Voltage
VGS=0V,IS=6A
Notes
a.Pulse Test:Pulse Width <_ 10us, Duty Cycle <_ 1%.
b.Guaranteed by design, not subject to production testing.
c.Drain current limited by maximum junction temperature.
d.Mounted on FR4 Board of 1 inch2 , 2oz.
Typ
0.7
17.5
18.0
18.5
19.5
22.0
20
11
19
36
21
6.3
0.83
3.4
0.86
Max Units
V
1 uA
±1 uA
1.5
22.0
22.5
23.0
25.0
29.0
V
m ohm
m ohm
m ohm
m ohm
m ohm
S
ns
ns
ns
ns
nC
nC
nC
1.2 V
Oct,24,2014
2 www.samhop.com.tw





@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site (Privacy Policy & Contact)