STF8236Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect Transistor
Ver 1.0
...
STF8236Green
Product
Sa mHop Microelectronics C orp.
Dual N-Channel Enhancement Mode Field Effect
Transistor
Ver 1.0
PRODUCT SUMMARY
VDSS 20V
ID RDS(ON) (mΩ) Max
22.0 @ VGS=4.5V 22.5 @ VGS=4.0V 6A 23.0 @ VGS=3.7V 25.0 @ VGS=3.1V 29.0 @ VGS=2.5V
FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Suface Mount Package. ESD Protected.
PIN 1 S1
S1 G1
D1/D2
S2
S2 G2
DFN 2X2
Bottom Drain Contact (D1/D2)
G1 3
4 G2
S1 2
5 S2
S1 1
6 S2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted)
Symbol VDS VGS
ID
IDM
Parameter Drain-Source Voltage Gate-Source Voltage
Drain Current-Continuous c
-Pulsed a c
TA=25°C TA=70°C
PD
Maximum Power Dissipation
TA=25°C TA=70°C
TJ, TSTG
Operating Junction and Storage Temperature Range
THERMAL CHARACTERISTICS
R JA
Thermal Resistance, Junction-to-Ambient
Limit 20 ±12 6 4.8 36 1.4 0.9
-55 to 150
90
Units V V A A A W W
°C
°C/W
Details are subject to change without notice.
1
Oct,24,2014
www.samhop.com.tw
STF8236
Ver 1.0
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise noted)
Symbol Parameter
Conditions
Min
OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Body Leakage Current
VGS=0V , ID=250uA VDS=16V , VGS=0V VGS= ±8V , VDS=0V
20
ON CHARACTERISTICS
VGS(th)
Gate Threshold Voltage
RDS(ON) Drain-Source On-State Resistance
gFS Forward Transconductance
SWITCHING CHARACTERISTICS b
tD(ON)
Turn-On Delay Time
tr tD(OFF)
Rise Time T...