LESHAN RADIO COMPANY, LTD.
30V N-Channel Enhancement-Mode MOSFET
VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON),
[email protected], Ids@5A = 52mΩ
Features
Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
▼ Simple Drive Requirement
▼ Small Package Outline
▼ Surface Mount Device
Ordering Information
Device
LN4812LT1G S-LN4812LT1G
LN4812LT3G S-LN4812LT3G
Marking N48 N48
Shipping 3000/Tape&Reel 10000/Tape&Reel
LN4812LT1G S-LN4812LT1G
3
1 2
SOT– 23 (TO–236AB)
N - Channel 3
1
2
Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted)
Symbol
Parameter
Limit
VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1)
PD Maximum Power Dissipation
TA = 25oC TA = 75oC
30 ± 20
6 30 1.4 0.8
TJ, Tstg
Operating Junction and Storage Temperature Range
RθJC Junction-to-Case Thermal Resistance
RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2)
Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing
-55 to 150 50 90
Unit V
A
W oC oC/W
Rev .O 1/4
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
ELECTRICAL CHARACTERISTICS
Symbol Parameter Static
BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage
IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage gfs Forward Transconductance Dynamic3)
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
td(on)
Turn-On Delay Time
tr Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf Turn-Off Fall Time
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance Source-Drain Diode
IS Max. Diode Forward Current
VSD Diode Forward Voltage
Note: Pulse test: pulse width <= 300us, duty cycle<= 2%
Test Condition
VGS = 0V, ID = 250uA VGS = 4.5V, ID = 5A VGS = 10V, ID = 6A VDS =VGS, ID = 250uA VDS = 24V, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 5V, ID = 6.9A
VDS = 15V, ID = 8.5A VGS = 10V
VDD = 15V, RL = 15Ω ID = 1A, VGEN = 10V RG = 6Ω
VDS = 15V, VGS = 0V f = 1.0 MHz
IS = 1A, VGS = 0V
Min Typ Max Unit
30 V
35.0 52.0 mΩ
22.0 38.0
1 1.5 3
V
1 uA
+ 100
nA
15.4 S
13 20 4.2 3.1 9 14 30 5 610 100 77
nC ns pF
3A 1.3 V
Rev .O 2/4
Id DRAIN CURRENT(A)
LESHAN RADIO COMPANY, LTD.
LN4812LT1G , S-LN4812LT1G
TYPICAL ELECTRICAL CHARACTERISTICS
Id, DRAIN CURRENT(A)
Vgs, GATE-TO-SOURCE VOLTAGE(V)
Figure 1. Transfer Characteristics
Vds,DRAIN-TO-SOURCE VOLTAGE(V)
Figure 2. On–Region Characteristics
Id-Drain Current(A)
Figure 3. On–Resistance versus Drain Current
Rds(on)-On-Resistance(Ω)
0.5
0.4
0.3 0.2 Id=5A
0.1
0 3 3.2 3.4 3.6 3.8 4 Vgs-Gate-to-Source Voltage(V)
Figure 4.