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S-LN4812LT1G Dataheets PDF



Part Number S-LN4812LT1G
Manufacturers LRC
Logo LRC
Description N-Channel Enhancement-Mode MOSFET
Datasheet S-LN4812LT1G DatasheetS-LN4812LT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), [email protected], Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Or.

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LESHAN RADIO COMPANY, LTD. 30V N-Channel Enhancement-Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@6 A = 38mΩ RDS(ON), [email protected], Ids@5A = 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance High Power and Current Handling Capability S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. ▼ Simple Drive Requirement ▼ Small Package Outline ▼ Surface Mount Device Ordering Information Device LN4812LT1G S-LN4812LT1G LN4812LT3G S-LN4812LT3G Marking N48 N48 Shipping 3000/Tape&Reel 10000/Tape&Reel LN4812LT1G S-LN4812LT1G 3 1 2 SOT– 23 (TO–236AB) N - Channel 3 1 2 Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Symbol Parameter Limit VDS Drain-Source Voltage VGS Gate-Source Voltage ID Continuous Drain Current IDM Pulsed Drain Current 1) PD Maximum Power Dissipation TA = 25oC TA = 75oC 30 ± 20 6 30 1.4 0.8 TJ, Tstg Operating Junction and Storage Temperature Range RθJC Junction-to-Case Thermal Resistance RθJA Junction-to-Ambient Thermal Resistance (PCB mounted) 2) Note: 1. Repetitive Rating: Pulse width limited by the maximum junction temperature 2. 1-in2 2oz Cu PCB board 3. Guaranteed by design; not subject to production testing -55 to 150 50 90 Unit V A W oC oC/W Rev .O 1/4 LESHAN RADIO COMPANY, LTD. LN4812LT1G , S-LN4812LT1G ELECTRICAL CHARACTERISTICS Symbol Parameter Static BVDSS Drain-Source Breakdown Voltage RDS(on) Drain-Source On-State Resistance RDS(on) Drain-Source On-State Resistance VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate Body Leakage gfs Forward Transconductance Dynamic3) Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Source-Drain Diode IS Max. Diode Forward Current VSD Diode Forward Voltage Note: Pulse test: pulse width <= 300us, duty cycle<= 2% Test Condition VGS = 0V, ID = 250uA VGS = 4.5V, ID = 5A VGS = 10V, ID = 6A VDS =VGS, ID = 250uA VDS = 24V, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 5V, ID = 6.9A VDS = 15V, ID = 8.5A VGS = 10V VDD = 15V, RL = 15Ω ID = 1A, VGEN = 10V RG = 6Ω VDS = 15V, VGS = 0V f = 1.0 MHz IS = 1A, VGS = 0V Min Typ Max Unit 30 V 35.0 52.0 mΩ 22.0 38.0 1 1.5 3 V 1 uA + 100 nA 15.4 S 13 20 4.2 3.1 9 14 30 5 610 100 77 nC ns pF 3A 1.3 V Rev .O 2/4 Id DRAIN CURRENT(A) LESHAN RADIO COMPANY, LTD. LN4812LT1G , S-LN4812LT1G TYPICAL ELECTRICAL CHARACTERISTICS Id, DRAIN CURRENT(A) Vgs, GATE-TO-SOURCE VOLTAGE(V) Figure 1. Transfer Characteristics Vds,DRAIN-TO-SOURCE VOLTAGE(V) Figure 2. On–Region Characteristics Id-Drain Current(A) Figure 3. On–Resistance versus Drain Current Rds(on)-On-Resistance(Ω) 0.5 0.4 0.3 0.2 Id=5A 0.1 0 3 3.2 3.4 3.6 3.8 4 Vgs-Gate-to-Source Voltage(V) Figure 4.


SS-1A-05 S-LN4812LT1G LNST3904F3T5G


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