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LNST3904F3T5G Dataheets PDF



Part Number LNST3904F3T5G
Manufacturers LRC
Logo LRC
Description NPN General Purpose Transistor
Datasheet LNST3904F3T5G DatasheetLNST3904F3T5G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor The LNST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device • S- Prefix for Automotive and.

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LESHAN RADIO COMPANY, LTD. NPN General Purpose Transistor The LNST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium. Features • hFE, 100−300 • Low VCE(sat), ≤ 0.4 V • Reduces Board Space • This is a Pb−Free Device • S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LNST3904F3T5G S-LNST3904F3T5G COLLECTOR 3 1 BASE 2 EMITTER LNST3904F3T5G MAXIMUM RATINGS Rating Symbol Value Unit Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS VCEO VCBO VEBO IC 40 Vdc 60 Vdc 6.0 Vdc 200 mAdc Characteristic Total Device Dissipation, TA = 25°C Derate above 25°C Symbol PD (Note 1) Max 290 2.3 Unit mW mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 1) 432 °C/W Total Device Dissipation, TA = 25°C Derate above 25°C PD 347 mW (Note 2) 2.8 mW/°C Thermal Resistance, Junction−to−Ambient RqJA (Note 2) 360 °C/W Thermal Resistance, Junction−to−Lead 3 RYJL (Note 2) 143 °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. 100 mm2 1 oz, copper traces. 2. 500 mm2 1 oz, copper traces. 3 12 SOT−1123 CASE 524AA STYLE 1 MARKING DIAGRAM 2M 2 = Device Code M = Date Code ORDERING INFORMATION Device Package Shipping† LNST3904F3T5G SOT−1123 8000/Tape & Reel S-LNST3904F3T5G (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Rev.O 1/4 LESHAN RADIO COMPANY, LTD. LNST3904F3T5G ;S-LNST3904F3T5G ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (Note 3) (IC = 1.0 mAdc, IB = 0) Collector −Base Breakdown Voltage (IC = 10 mAdc, IE = 0) Emitter −Base Breakdown Voltage (IE = 10 mAdc, IC = 0) Collector Cutoff Current (VCE = 30 Vdc, VEB = 3.0 Vdc) ON CHARACTERISTICS (Note 3) DC Current Gain (IC = 0.1 mAdc, VCE = 1.0 Vdc) (IC = 1.0 mAdc, VCE = 1.0 Vdc) (IC = 10 mAdc, VCE = 1.0 Vdc) (IC = 50 mAdc, VCE = 1.0 Vdc) (IC = 100 mAdc, VCE = 1.0 Vdc) Collector −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) Base −Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) (IC = 50 mAdc, IB = 5.0 mAdc) SMALL−SIGNAL CHARACTERISTICS Current −Gain − Bandwidth Product (IC = 10 mAdc, VCE = 20 Vdc, f = 10.


S-LN4812LT1G LNST3904F3T5G S-LNST3904F3T5G


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