LESHAN RADIO COMPANY, LTD.
NPN General Purpose Transistor
The LNST3904F3T5G device is a spin−off of our popular SOT−23/...
LESHAN RADIO COMPANY, LTD.
NPN General Purpose
Transistor
The LNST3904F3T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563/SOT−963 three−leaded device. It is designed for general purpose amplifier applications and is housed in the SOT−1123 surface mount package. This device is ideal for low−power surface mount applications where board space is at a premium.
Features
hFE, 100−300 Low VCE(sat), ≤ 0.4 V Reduces Board Space This is a Pb−Free Device S- Prefix for Automotive and Other Applications Requiring Unique Site
and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
LNST3904F3T5G S-LNST3904F3T5G
COLLECTOR 3
1 BASE
2 EMITTER LNST3904F3T5G
MAXIMUM RATINGS
Rating
Symbol Value
Unit
Collector −Emitter Voltage Collector −Base Voltage Emitter −Base Voltage Collector Current − Continuous THERMAL CHARACTERISTICS
VCEO VCBO VEBO
IC
40 Vdc 60 Vdc 6.0 Vdc 200 mAdc
Characteristic Total Device Dissipation, TA = 25°C
Derate above 25°C
Symbol PD
(Note 1)
Max
290 2.3
Unit
mW mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 1)
432
°C/W
Total Device Dissipation, TA = 25°C Derate above 25°C
PD 347 mW (Note 2) 2.8 mW/°C
Thermal Resistance, Junction−to−Ambient
RqJA (Note 2)
360
°C/W
Thermal Resistance, Junction−to−Lead 3
RYJL (Note 2)
143
°C/W
Junction and Storage Temperature Range TJ, Tstg
−55 to +150
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation...
