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LNTA4001NT1G Dataheets PDF



Part Number LNTA4001NT1G
Manufacturers LRC
Logo LRC
Description Small Signal MOSFET
Datasheet LNTA4001NT1G DatasheetLNTA4001NT1G Datasheet (PDF)

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available • ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications •ăPower Management Load Switch •ăLevel Shift •ăPortable Applic.

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LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 20 V, 238 mA, Single, N-Channel, Gate ESD Protection Features •ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available • ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. Applications •ăPower Management Load Switch •ăLevel Shift •ăPortable Applications such as Cell Phones, Media Players, Digital Cameras, PDA's, Video Games, Hand Held Computers, etc. MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Drain-to-Source Voltage Gate-to-Source Voltage Continuous Drain Current (Note 1) Steady State = 25°C VDSS VGS ID 20 ±10 238 Power Dissipation (Note 1) Steady State = 25°C PD 300 Unit V V mA mW Pulsed Drain Current tP v 10 ms Operating Junction and Storage Temperature IDM TJ, TSTG 714 -55 to 150 mA °C Continuous Source Current (Body Diode) Lead Temperature for Soldering Purposes (1/8” from case for 10 s) ISD 238 mA TL 260 °C Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit Junction-to-Ambient – Steady State (Note 1) RqJA 416 °C/W 1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces). LNTA4001NT1G S-LNTA4001NT1G SC-89 V(BR)DSS 20 V RDS(on) Typ @ VGS 1.5 W @ 4.5 V 2.2 W @ 2.5 V ID MAX (Note 1) 238 mA PIN CONNECTIONS SC-89 (3-Leads) Gate 1 3 Drain Source 2 (Top View) MARKING DIAGRAM 3 TF 12 TF = Specific Device Code M = Month Code M ORDERING INFORMATION Device Package LNTA4001NT1G S-LNTA4001NT1G LNTA4001NT3G S-LNTA4001NT3G SC-89 SC-89 Shipping 3000 Tape & Reel 10000 Tape & Reel Rev .O 1/5 LESHAN RADIO COMPANY, LTD. LNTA4001NT1G , S-LNTA4001NT1G ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2) V(BR)DSS IDSS IGSS VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 20 V VDS = 0 V, VGS = ±10 V 20 1.0 ±100 V mA mA Gate Threshold Voltage Drain-to-Source On Resistance Forward Transconductance CAPACITANCES VGS(TH) VDS = 3 V, ID = 100 mA 0.5 1.0 1.5 V RDS(on) VGS = 4.5 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA 1.5 3.0 W 2.2 3.5 gFS VDS = 3 V, ID = 10 mA 50 mS Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3) CISS COSS CRSS VDS = 5 V, f = 1 MHz, VGS = 0 V 11.5 20 10 15 pF 3.5 6.0 Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS td(ON) tr td(OFF) tf VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W 13 ns 15 98 ns 60 Forward Diode Voltage VSD VGS = 0 V, IS = 10 mA 2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures. 0.66 0.8 V Rev .O 2/5 ID, DRAIN CURRENT (A) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) LESHAN RADIO COMPANY, LTD. LNTA4001NT1G , S-LNTA4001NT1G TYPICAL PERFORMANCE CURVES 0.2 0.18 0.16 0.14 0.12 0.1 0.08 0.06 0.04 0.02 0 0 VGS = 10 V VGS = 5 V VGS = 2.8 V VGS = 2.4 V VGS = 2 V TJ = 25°C . VGS = 1.2 V VGS = 1.4 V 0.4 0.8 1.2 1.6 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 1. On-region Characteristics 2 ID, DRAIN CURRENT (A) 0.2 VDS = 5 V 0.16 0.12 0.08 0.04 TJ = 125°C TJ = 25°C 0 0.6 TJ = -55°C 0.8 1 1.2 1.4 1.6 1.8 2 VGS, GATE-TO-SOURCE VOLTAGE (V) Figure 2. Transfer Characteristics 2.5 VGS = 4.5 V 2 TJ = 125°C 2.5 TJ = 25°C VGS = 2.5 V 2 RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.5 TJ = 25°C 1 TJ = -55°C 1.5 VGS = 4.5 V 1 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 Figure 3. On-resistance versus Drain Current and Temperature 0.5 0 0.05 0.1 0.15 ID, DRAIN CURRENT (A) 0.2 Figure 4. On-resistance versus Drain Current and Gate Voltage 2 1.8 ID = 0.01 A 1.6 VGS = 4.5 V 1.4 1.2 1 0.8 0.6 0.4 0.2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) Figure 5. On-resistance Variation with Temperature 150 IDSS, LEAKAGE (nA) 1000 VGS = 0 V 100 10 TJ = 150°C TJ = 125°C 1 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V) Figure 6. Drain-to-Source Leakage Current versus Voltage RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) Rev .O 3/5 C, CAPACITANCE (pF) t, TIME (ns) LESHAN RADIO COMPANY, LTD. LNTA4001NT1G , S-LNTA4001NT1G TYPICAL PERFORMANCE CURVES 25 Ciss 20 Crss 15 TJ = 25°C Ciss 10 Coss 5 VDS = 0 V VGS = 0 V 0 10 5 0 5 10 Crss 15 20 VGS VDS GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V) Figure 7. Capacitance Variation.


S-LNST3906F3T5G LNTA4001NT1G S-LNTA4001NT1G


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