Document
LESHAN RADIO COMPANY, LTD.
Small Signal MOSFET
20 V, 238 mA, Single, N-Channel, Gate ESD Protection
Features
•ăLow Gate Charge for Fast Switching •ăSmall 1.6 x 1.6 mm Footprint •ăESD Protected Gate •ăPb-Free Package is Available
• ESDD PPrrootteecctteedd:2:105000VV • ES-SPDrePfirxotfeocrteAdu:t1o5m0o0tVive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
Applications
•ăPower Management Load Switch •ăLevel Shift •ăPortable Applications such as Cell Phones, Media Players,
Digital Cameras, PDA's, Video Games, Hand Held Computers, etc.
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol Value
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current (Note 1)
Steady State = 25°C
VDSS VGS ID
20 ±10 238
Power Dissipation (Note 1)
Steady State = 25°C PD
300
Unit V V mA
mW
Pulsed Drain Current
tP v 10 ms
Operating Junction and Storage Temperature
IDM
TJ, TSTG
714
-55 to 150
mA °C
Continuous Source Current (Body Diode)
Lead Temperature for Soldering Purposes (1/8” from case for 10 s)
ISD 238 mA TL 260 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE RATINGS
Parameter
Symbol Max Unit
Junction-to-Ambient – Steady State (Note 1)
RqJA
416 °C/W
1. Surface-mounted on FR4 board using 1 in sq. pad size (Cu area = 1.127 in sq. [1 oz] including traces).
LNTA4001NT1G S-LNTA4001NT1G
SC-89
V(BR)DSS 20 V
RDS(on) Typ @ VGS 1.5 W @ 4.5 V
2.2 W @ 2.5 V
ID MAX (Note 1)
238 mA
PIN CONNECTIONS SC-89 (3-Leads)
Gate 1
3 Drain
Source 2 (Top View)
MARKING DIAGRAM 3
TF 12 TF = Specific Device Code M = Month Code
M
ORDERING INFORMATION
Device
Package
LNTA4001NT1G S-LNTA4001NT1G
LNTA4001NT3G S-LNTA4001NT3G
SC-89 SC-89
Shipping 3000 Tape & Reel 10000 Tape & Reel
Rev .O 1/5
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min Typ Max Unit
OFF CHARACTERISTICS
Drain-to-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-to-Source Leakage Current ON CHARACTERISTICS (Note 2)
V(BR)DSS IDSS IGSS
VGS = 0 V, ID = 100 mA VGS = 0 V, VDS = 20 V VDS = 0 V, VGS = ±10 V
20
1.0 ±100
V mA mA
Gate Threshold Voltage Drain-to-Source On Resistance
Forward Transconductance CAPACITANCES
VGS(TH)
VDS = 3 V, ID = 100 mA
0.5 1.0 1.5 V
RDS(on)
VGS = 4.5 V, ID = 10 mA VGS = 2.5 V, ID = 10 mA
1.5 3.0 W
2.2 3.5
gFS VDS = 3 V, ID = 10 mA
50 mS
Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 3)
CISS COSS CRSS
VDS = 5 V, f = 1 MHz, VGS = 0 V
11.5 20 10 15 pF 3.5 6.0
Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time DRAIN-SOURCE DIODE CHARACTERISTICS
td(ON) tr
td(OFF) tf
VGS = 4.5 V, VDS = 5 V, ID = 10 mA, RG = 10 W
13 ns 15 98 ns 60
Forward Diode Voltage
VSD VGS = 0 V, IS = 10 mA
2. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.
0.66 0.8 V
Rev .O 2/5
ID, DRAIN CURRENT (A)
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
TYPICAL PERFORMANCE CURVES
0.2 0.18 0.16 0.14 0.12
0.1 0.08 0.06 0.04 0.02
0 0
VGS = 10 V VGS = 5 V
VGS = 2.8 V
VGS = 2.4 V
VGS = 2 V TJ = 25°C
. VGS = 1.2 V
VGS = 1.4 V
0.4 0.8 1.2 1.6 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 1. On-region Characteristics
2
ID, DRAIN CURRENT (A)
0.2 VDS = 5 V
0.16
0.12
0.08 0.04
TJ = 125°C
TJ = 25°C
0 0.6
TJ = -55°C
0.8 1
1.2 1.4 1.6 1.8 2
VGS, GATE-TO-SOURCE VOLTAGE (V)
Figure 2. Transfer Characteristics
2.5 VGS = 4.5 V
2
TJ = 125°C
2.5 TJ = 25°C VGS = 2.5 V
2
RDS(on), DRAIN-TO-SOURCE RESISTANCE (W)
1.5 TJ = 25°C 1 TJ = -55°C
1.5 VGS = 4.5 V 1
0.5 0
0.05 0.1 0.15 ID, DRAIN CURRENT (A)
0.2
Figure 3. On-resistance versus Drain Current and Temperature
0.5 0
0.05 0.1 0.15 ID, DRAIN CURRENT (A)
0.2
Figure 4. On-resistance versus Drain Current and Gate Voltage
2 1.8 ID = 0.01 A 1.6 VGS = 4.5 V
1.4
1.2
1
0.8
0.6
0.4
0.2
0 -50
-25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C)
Figure 5. On-resistance Variation with Temperature
150
IDSS, LEAKAGE (nA)
1000
VGS = 0 V
100
10
TJ = 150°C TJ = 125°C
1 0 5 10 15 20 VDS, DRAIN-TO-SOURCE VOLTAGE (V)
Figure 6. Drain-to-Source Leakage Current versus Voltage
RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED)
Rev .O 3/5
C, CAPACITANCE (pF) t, TIME (ns)
LESHAN RADIO COMPANY, LTD.
LNTA4001NT1G , S-LNTA4001NT1G
TYPICAL PERFORMANCE CURVES
25 Ciss
20 Crss
15
TJ = 25°C
Ciss 10
Coss
5
VDS = 0 V VGS = 0 V 0
10 5 0 5
10
Crss 15 20
VGS VDS
GATE-TO-SOURCE OR DRAIN-TO-SOURCE VOLTAGE (V)
Figure 7. Capacitance Variation.